MCH6604 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH6604
Código: FD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
Qgⓘ - Carga de la puerta: 1.57 nC
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 4.7 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm
Paquete / Cubierta: MCPH6
Búsqueda de reemplazo de MCH6604 MOSFET
MCH6604 Datasheet (PDF)
mch6604.pdf

Ordering number : EN6459A MCH6604SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6604ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6605.pdf

Ordering number:ENN6460P-Channel Silicon MOSFETMCH6605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6605] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :
mch6601.pdf

Ordering number : EN6458B MCH6601SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6601ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6607.pdf

Ordering number : ENN7039MCH6607P-Channel Silicon MOSFETMCH6607Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6607] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: 2N7055 | 10N65K | APQ03SN80CH
History: 2N7055 | 10N65K | APQ03SN80CH



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMPF8N60BJ | JMPF840BJ | JMPF7N65BJ | JMPF630BJ | JMPF5N50BJ | JMPF4N65BJ | JMPF4N60BJ | JMPF25N50BJ | JMPF20N65BJ | JMPF20N60BJ | JMSL0303TU | JMSL0303TG | JMSL0303AU | JMSL0303AK | JMSL0303AG | JMSL0315AK
Popular searches
mp20a transistor | mrf450 | oc70 transistor | p0603bd mosfet | p157r5nt | ptp03n04n | sm4377 mosfet datasheet | tip31c reemplazo