MCH6604 Todos los transistores

 

MCH6604 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MCH6604
   Código: FD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
   Qgⓘ - Carga de la puerta: 1.57 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 4.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm
   Paquete / Cubierta: MCPH6
 

 Búsqueda de reemplazo de MCH6604 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MCH6604 Datasheet (PDF)

 ..1. Size:252K  sanyo
mch6604.pdf pdf_icon

MCH6604

Ordering number : EN6459A MCH6604SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6604ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

 8.1. Size:42K  sanyo
mch6605.pdf pdf_icon

MCH6604

Ordering number:ENN6460P-Channel Silicon MOSFETMCH6605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6605] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :

 8.2. Size:252K  sanyo
mch6601.pdf pdf_icon

MCH6604

Ordering number : EN6458B MCH6601SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6601ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

 8.3. Size:30K  sanyo
mch6607.pdf pdf_icon

MCH6604

Ordering number : ENN7039MCH6607P-Channel Silicon MOSFETMCH6607Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6607] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2N7055 | 10N65K | APQ03SN80CH

 

 
Back to Top

 


 
.