2SK935 Todos los transistores

 

2SK935 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK935

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 300 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.45 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET 2SK935

 

2SK935 Datasheet (PDF)

1.1. 2sk935.pdf Size:200K _inchange_semiconductor

2SK935
2SK935

isc N-Channel MOSFET Transistor 2SK935 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 300V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 300 V DSS GS V Gate-Source

5.1. 2sk930.pdf Size:170K _update

2SK935
2SK935

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs !   ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub

5.2. 2sk937.pdf Size:79K _sanyo

2SK935
2SK935

Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET process. unit:mm Large ? yfs? . 2019B Small Ciss. [2SK937] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 JEDEC : TO-92 EIAJ : SC-43 1.3 1.3 SANYO : NP Specifications Absolute Maximum

 5.3. 2sk932.pdf Size:91K _sanyo

2SK935
2SK935

Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] Adoption of FBET process. 0.4 0.16 Large ? yfs? . 3 Small Ciss. 0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK932-applied

5.4. 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf Size:48K _no

2SK935



 5.5. 2sk934.pdf Size:200K _inchange_semiconductor

2SK935
2SK935

isc N-Channel MOSFET Transistor 2SK934 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Source

Otros transistores... 2SK902 , 2SK903 , 2SK904 , 2SK905 , 2SK906 , 2SK928 , 2SK929 , 2SK934 , IRF460 , 2SK936 , 2SK946 , 2SK947 , 2SK947-MR , 2SK948 , 2SK949 , 2SK949-MR , 2SK950 .

 

 
Back to Top

 


2SK935
  2SK935
  2SK935
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top