2SK935 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK935

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 300 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.45 Ohm

Empaquetado / Estuche: TO220

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2SK935 Datasheet (PDF)

5.1. 2sk930.pdf Size:170K _update

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN 　 Keep safety in your circuit designs ! 　・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub

5.2. 2sk937.pdf Size:79K _sanyo

Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions � Adoption of FBET process. unit:mm � Large ? yfs? . 2019B � Small Ciss. [2SK937] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 JEDEC : TO-92 EIAJ : SC-43 1.3 1.3 SANYO : NP Specifications Absolute Maximum

5.3. 2sk932.pdf Size:91K _sanyo

Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions � AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] � Adoption of FBET process. 0.4 0.16 � Large ? yfs? . 3 � Small Ciss. 0 to 0.1 � Ultralow noise figure. � Ultrasmall-sized package permitting 2SK932-applied

5.4. 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf Size:48K _no