2SK946 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK946
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 2SK946 MOSFET
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2SK946 datasheet
9.1. Size:138K 1
2sk948.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.5. Size:540K toshiba
2sk944.pdf 
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9.8. Size:134K fuji
2sk949m.pdf 
"2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.11. Size:304K inchange semiconductor
2sk948.pdf 
isc N-Channel MOSFET Transistor 2SK948 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.12. Size:203K inchange semiconductor
2sk944.pdf 
isc N-Channel MOSFET Transistor 2SK944 DESCRIPTION Drain Current I =22A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V
9.13. Size:279K inchange semiconductor
2sk947-mr.pdf 
isc N-Channel MOSFET Transistor 2SK947-MR FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
9.14. Size:278K inchange semiconductor
2sk949-mr.pdf 
isc N-Channel MOSFET Transistor 2SK949-MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
Otros transistores... 2SK904, 2SK905, 2SK906, 2SK928, 2SK929, 2SK934, 2SK935, 2SK936, AO3407, 2SK947, 2SK947-MR, 2SK948, 2SK949, 2SK949-MR, 2SK950, 2SK951, 2SK951-01