NCV8402 Todos los transistores

 

NCV8402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCV8402
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 42 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SOT223
 

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NCV8402 Datasheet (PDF)

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NCV8402

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe

 0.1. Size:92K  onsemi
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NCV8402

NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm

 0.2. Size:118K  onsemi
ncv8402ad.pdf pdf_icon

NCV8402

NCV8402D, NCV8402ADDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D/AD is a dual protected Low-Side Smart Discrete device.The protection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suita

 0.3. Size:147K  onsemi
ncv8402d.pdf pdf_icon

NCV8402

NCV8402DDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D is a dual protected Low-Side Smart Discrete device. Theprotection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suitable for harsh

Otros transistores... MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , IRFZ48N , NCV8402D , NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z .

History: FDA28N50F | J304 | 15N40 | RQK0604IGDQA

 

 
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