NDD03N60Z Todos los transistores

 

NDD03N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDD03N60Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 61 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 12 nC

Resistencia drenaje-fuente RDS(on): 3.3 Ohm

Empaquetado / Estuche: DPAK, IPAK

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NDD03N60Z Datasheet (PDF)

0.1. ndf03n60z ndp03n60z ndd03n60z.pdf Size:162K _onsemi

NDD03N60Z
NDD03N60Z

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source V

8.1. ndd03n40z.pdf Size:118K _onsemi

NDD03N60Z
NDD03N60Z

NDD03N40Z, NDT03N40ZN-Channel Power MOSFET400 V, 3.4 WFeatures 100% Avalanche Tested Extremely High dv/dt Capabilityhttp://onsemi.com Gate Charge Minimized Very Low Intrinsic CapacitanceV(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

8.2. ndd03n80z.pdf Size:114K _onsemi

NDD03N60Z
NDD03N60Z

NDD03N80ZNChannel Power MOSFET800 V, 4.5 WFeatures ESD Diode-Protected Gate 100% Avalanche Testedhttp://onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant800 V 4.5 W @ 10 VABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Value UnitN-ChannelDrain-to-Source Volta

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