NDD03N60Z Todos los transistores

 

NDD03N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDD03N60Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
   Paquete / Cubierta: DPAK IPAK

 Búsqueda de reemplazo de MOSFET NDD03N60Z

 

NDD03N60Z Datasheet (PDF)

 ..1. Size:162K  onsemi
ndf03n60z ndp03n60z ndd03n60z.pdf pdf_icon

NDD03N60Z

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant 600 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source V

 8.1. Size:118K  onsemi
ndd03n40z.pdf pdf_icon

NDD03N60Z

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features 100% Avalanche Tested Extremely High dv/dt Capability http //onsemi.com Gate Charge Minimized Very Low Intrinsic Capacitance V(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected 400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.2. Size:114K  onsemi
ndd03n80z.pdf pdf_icon

NDD03N60Z

NDD03N80Z N Channel Power MOSFET 800 V, 4.5 W Features ESD Diode-Protected Gate 100% Avalanche Tested http //onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX Compliant 800 V 4.5 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Value Unit N-Channel Drain-to-Source Volta

 8.3. Size:119K  onsemi
ndd03n50z.pdf pdf_icon

NDD03N60Z

NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 500 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol Value Unit

Otros transistores... NCV8402D , NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , AON7403 , NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ .

 

 
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