NDD03N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDD03N60Z
   Código: 3N60ZG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
   Paquete / Cubierta: DPAK IPAK

Búsqueda de reemplazo de MOSFET NDD03N60Z

NDD03N60Z Datasheet (PDF)

..1. Size:162K onsemi
ndf03n60z ndp03n60z ndd03n60z.pdf

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source V

8.1. Size:118K onsemi
ndd03n40z.pdf

NDD03N40Z, NDT03N40ZN-Channel Power MOSFET400 V, 3.4 WFeatures 100% Avalanche Tested Extremely High dv/dt Capabilityhttp://onsemi.com Gate Charge Minimized Very Low Intrinsic CapacitanceV(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

8.2. Size:114K onsemi
ndd03n80z.pdf

NDD03N80ZNChannel Power MOSFET800 V, 4.5 WFeatures ESD Diode-Protected Gate 100% Avalanche Testedhttp://onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant800 V 4.5 W @ 10 VABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Value UnitN-ChannelDrain-to-Source Volta

8.3. Size:119K onsemi
ndd03n50z.pdf

NDD03N50ZN-Channel Power MOSFET500 V, 3.3 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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