NDF04N62Z Todos los transistores

 

NDF04N62Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDF04N62Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 620 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO220FP
 

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NDF04N62Z Datasheet (PDF)

 ..1. Size:152K  onsemi
ndf04n62z ndd04n62z.pdf pdf_icon

NDF04N62Z

NDF04N62Z, NDD04N62ZN-Channel Power MOSFET620 V, 2.0 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant620 V2.0 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParameter Symbol

 7.1. Size:291K  1
ndf04n60z ndd04n60z.pdf pdf_icon

NDF04N62Z

NDF04N60Z, NDD04N60ZPower MOSFET, N-Channel, 600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParam

 7.2. Size:148K  1
ndf04n60z ndp04n60z ndd04n60z.pdf pdf_icon

NDF04N62Z

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS

 7.3. Size:136K  onsemi
ndf04n60z ndd04n60z.pdf pdf_icon

NDF04N62Z

NDF04N60Z, NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParamete

Otros transistores... NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , IRFP064N , NDF05N50Z , NDF06N60Z , FDMC8327L , NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 .

History: BR75N08 | 2N7272H | FX20ASJ-06 | APT1002RBN | FS20SM-5

 

 
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