NDF04N62Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDF04N62Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 620 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO220FP

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NDF04N62Z Datasheet (PDF)

..1. Size:152K onsemi
ndf04n62z ndd04n62z.pdf

NDF04N62Z, NDD04N62ZN-Channel Power MOSFET620 V, 2.0 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant620 V2.0 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParameter Symbol

7.1. Size:291K 1
ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60ZPower MOSFET, N-Channel, 600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParam

7.2. Size:148K 1
ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS

7.3. Size:136K onsemi
ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParamete

7.4. Size:130K onsemi
ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (

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