NDF04N62Z Todos los transistores

 

NDF04N62Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDF04N62Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 620 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: TO220FP

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NDF04N62Z datasheet

 ..1. Size:152K  onsemi
 ndf04n62z ndd04n62z.pdf pdf_icon

NDF04N62Z

NDF04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 2.0 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 620 V 2.0 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Parameter Symbol

 7.1. Size:291K  1
 ndf04n60z ndd04n60z.pdf pdf_icon

NDF04N62Z

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Param

 7.2. Size:148K  1
 ndf04n60z ndp04n60z ndd04n60z.pdf pdf_icon

NDF04N62Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 7.3. Size:136K  onsemi
 ndf04n60z ndd04n60z.pdf pdf_icon

NDF04N62Z

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Paramete

MOSTRAR MÁS

Otros transistores... NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , AO4468 , NDF05N50Z , NDF06N60Z , FDMC8327L , NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 .

 

 

 


 
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