NDF10N62Z Todos los transistores

 

NDF10N62Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDF10N62Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 620 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO220FP

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NDF10N62Z Datasheet (PDF)

 ..1. Size:137K  onsemi
ndf10n62z ndp10n62z.pdf

NDF10N62Z
NDF10N62Z

NDF10N62Z, NDP10N62ZN-Channel Power MOSFET620 V, 0.65 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 5 A These Devices are Pb-Free and RoHS Compliant620 V0.65 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF10N62Z NDP10N62Z UnitN-Channel

 7.1. Size:108K  onsemi
ndf10n60z ndp10n60z.pdf

NDF10N62Z
NDF10N62Z

NDF10N60Z, NDP10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 5 ACompliant600 V0.75 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP U

 7.2. Size:112K  onsemi
ndf10n60z.pdf

NDF10N62Z
NDF10N62Z

NDF10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS650 V0.75 WCompliantABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-Channel

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