NTA4001N Todos los transistores

 

NTA4001N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTA4001N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.238 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SC75 SOT416

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NTA4001N Datasheet (PDF)

 ..1. Size:132K  onsemi
nta4001n nva4001n.pdf

NTA4001N
NTA4001N

NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre

 ..2. Size:81K  onsemi
nta4001n.pdf

NTA4001N
NTA4001N

NTA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA Pb-Free Package is Available2.2 W @ 2.5 VApplications3 Power Management Load Switch L

 0.1. Size:128K  onsemi
nta4001nt1 nva4001n.pdf

NTA4001N
NTA4001N

NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre

 0.2. Size:146K  lrc
lnta4001nt1g.pdf

NTA4001N
NTA4001N

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD Protection3Features Low Gate Charge for Fast Switching1 Small 1.6 x 1.6 mm Footprint2 ESD Protected GateSC-89 Pb-Free Package is AvailableApplications Power Management Load Switch Level ShiftV(BR)DSS RDS(on) ID MAXTyp @ VGS (Note 1) Portabl

 0.3. Size:212K  lrc
lnta4001nt1g s-lnta4001nt1g.pdf

NTA4001N
NTA4001N

LESHAN RADIO COMPANY, LTD.LNTA4001NT1GSmall Signal MOSFETS-LNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD ProtectionFeatures Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is AvailableSC-89 ESD Protected:2000VESD Protected:1500V S- Prefix for Automotive and Other Applications Requiring ESD

Otros transistores... NDF10N62Z , NDF11N50Z , NIC9N05TS1 , NID6002N , NID9N05CL , NIF9N05CL , NIMD6001 , FDD4N60NZ , IRF3710 , NTA4151P , NTA4153N , NTA7002N , NTB25P06 , NTB35N15 , NTB45N06 , NTB45N06L , NTB5404N .

 

 
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