NTD20N03L27 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD20N03L27
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 137 nS
Cossⓘ - Capacitancia de salida: 271 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Encapsulados: DPAK
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NTD20N03L27 datasheet
ntd20n03l27 nvd20n03l27.pdf
NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin
ntd20n03l27.pdf
NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. Features 20 A, 30 V, RDS(on) = 27 mW
ntd20n03l27.pdf
NTD20N03L27 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET AB
ntd20n03l27g.pdf
NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. 20 A, 30 V, RDS(on) = 27 mW
Otros transistores... NTB60N06 , NTB6410AN , NTB6411AN , NTB6412AN , NTB6413AN , NTD110N02R , NTD14N03R , NTD18N06L , IRLB4132 , NTD20N06 , NTD20N06L , NTD20P06L , NTD24N06 , NTD24N06L , NTD25P03L , NTD2955 , NTD3055-094 .
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