NTD20P06L Todos los transistores

 ..1. Size:139K  onsemi
 ntd20p06l ntdv20p06l.pdf

NTD20P06L, NTDV20P06L MOSFET Power, Single, P-Channel, DPAK -60 V, -15.5 A Features www.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching ID MAX AEC Q101 Qualified - NTDV20P06L V(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant -60 V 130 mW @ -5.0 V -15.5 A Applications Bridge

 ..2. Size:870K  cn vbsemi
 ntd20p06l.pdf

NTD20P06L www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym

 0.1. Size:146K  onsemi
 ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf

NTD20P06L, NTDV20P06L Power MOSFET -60 V, -15.5 A, Single P-Channel, DPAK Features Withstands High Energy in Avalanche and Commutation Modes http //onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06L ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP (Note 1) Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir

 0.2. Size:112K  onsemi
 ntd20p06l-d.pdf

NTD20P06L Power MOSFET -60 V, -15.5 A, Single P-Channel, DPAK Features Withstands High Energy in Avalanche and Commutation Modes http //onsemi.com Low Gate Charge for Fast Switching These are Pb-Free Devices ID MAX V(BR)DSS RDS(on) TYP (Note 1) Applications Bridge Circuits -60 V 130 mW @ -5.0 V -15.5 A Power Supplies, Power Motor Controls DC-DC Conversion

 9.1. Size:95K  onsemi
 ntd20n03l27 nvd20n03l27.pdf

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin

 9.2. Size:89K  onsemi
 ntd20n06l ntdv20n06l.pdf

NTD20N06L, NTDV20N06L Power MOSFET 20 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in www.onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli

 9.3. Size:127K  onsemi
 ntd20n03l27g.pdf

NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. 20 A, 30 V, RDS(on) = 27 mW

 9.4. Size:117K  onsemi
 ntd20n06lg.pdf

NTD20N06L, NTDV20N06L Power MOSFET 20 Amps, 60 Volts Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V (Note 1) AEC Q101 Qualified - NTDV20N06L These Devices are Pb-Free and are RoHS C

 9.5. Size:104K  onsemi
 ntd20n03l27.pdf

NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. Features 20 A, 30 V, RDS(on) = 27 mW

 9.6. Size:82K  onsemi
 ntd20n06l.pdf

 9.7. Size:149K  onsemi
 ntd20n06-001 ntd20n06-1g ntd20n06g.pdf

NTD20N06, NTDV20N06 Power MOSFET 20 Amps, 60 Volts, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower RDS(on) http //onsemi.com Lower VDS(on) Lower Capacitances V(BR)DSS RDS(on) TYP ID MAX Lower Total Gate Charge 60 V 37.5 mW 20 A Lower and Tighter

 9.8. Size:116K  onsemi
 ntd20n06.pdf

NTD20N06 Power MOSFET 20 Amps, 60 Volts, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http //onsemi.com Lower RDS(on) Lower VDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances 60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSD N-Cha

 9.9. Size:771K  cn vbsemi
 ntd20n06lt4g.pdf

NTD20N06LT4G www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 9.10. Size:1437K  cn vbsemi
 ntd20n03l27.pdf

NTD20N03L27 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET AB

 9.11. Size:835K  cn vbsemi
 ntd20n06t4.pdf

NTD20N06T4 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no