NTD20P06L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD20P06L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 207 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NTD20P06L
NTD20P06L Datasheet (PDF)
ntd20p06l ntdv20p06l.pdf
NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge
ntd20p06l.pdf
NTD20P06Lwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sym
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf
NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir
ntd20p06l-d.pdf
NTD20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching These are Pb-Free DevicesID MAXV(BR)DSS RDS(on) TYP (Note 1)Applications Bridge Circuits-60 V 130 mW @ -5.0 V -15.5 A Power Supplies, Power Motor Controls DC-DC Conversion
ntd20n03l27 nvd20n03l27.pdf
NTD20N03L27, NVD20N03L27Power MOSFET20 A, 30 V, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.The drain-to-source diode has a ideal fast but soft recovery.http://onsemi.comFeatures Ultra-Low RDS(on), Sin
ntd20n06l ntdv20n06l.pdf
NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inwww.onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli
ntd20n03l27g.pdf
NTD20N03L27,NVD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in. http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.20 A, 30 V, RDS(on) = 27 mW
ntd20n06lg.pdf
NTD20N06L, NTDV20N06LPower MOSFET20 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V(Note 1) AEC Q101 Qualified - NTDV20N06L These Devices are Pb-Free and are RoHS C
ntd20n03l27.pdf
NTD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.Features20 A, 30 V, RDS(on) = 27 mW
ntd20n06l.pdf
NTD20N06LPower MOSFET20 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V(Note 1) Pb-Free Packages are AvailableTypical ApplicationsN-ChannelD Power Supplies
ntd20n06-001 ntd20n06-1g ntd20n06g.pdf
NTD20N06, NTDV20N06Power MOSFET20 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Features Lower RDS(on)http://onsemi.com Lower VDS(on) Lower Capacitances V(BR)DSS RDS(on) TYP ID MAX Lower Total Gate Charge60 V 37.5 mW 20 A Lower and Tighter
ntd20n06.pdf
NTD20N06Power MOSFET20 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSDN-Cha
ntd20n06lt4g.pdf
NTD20N06LT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
ntd20n03l27.pdf
NTD20N03L27www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETAB
ntd20n06t4.pdf
NTD20N06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no
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