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NTD2955 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD2955
   Código: NT2955_NTP2955
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: DPAK
 

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NTD2955 Datasheet (PDF)

 ..1. Size:68K  onsemi
 ntd2955.pdf pdf_icon

NTD2955

NTD2955Power MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe opera

 ..2. Size:98K  onsemi
 ntd2955 nvd2955.pdf pdf_icon

NTD2955

NTD2955, NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating sa

 0.1. Size:92K  onsemi
 ntd2955-p.pdf pdf_icon

NTD2955

NTD2955, NTD2955PPower MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating

 0.2. Size:114K  onsemi
 ntd2955-1g ntd2955g.pdf pdf_icon

NTD2955

NTD2955, NTD2955P,NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerV(BR)DSS RDS(on) TYP ID MAXmotor controls. These devices are particularly well suited for bridge-60 V

MOSTRAR MÁS

Otros transistores... NTD18N06L , NTD20N03L27 , NTD20N06 , NTD20N06L , NTD20P06L , NTD24N06 , NTD24N06L , NTD25P03L , IRFB3607 , NTD3055-094 , NTD3055-150 , NTD3055L104 , NTD3055L170 , NTD40N03R , NTD4302 , NTD4804N , NTD4805N .

History: NDD05N50Z

 

 
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