NTD4804N Todos los transistores

 

NTD4804N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4804N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 93.75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 117 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 952 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: DPAK

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NTD4804N datasheet

 ..1. Size:89K  onsemi
ntd4804n nvd4804n.pdf pdf_icon

NTD4804N

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A

 0.1. Size:157K  onsemi
ntd4804n-1g.pdf pdf_icon

NTD4804N

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117

 0.2. Size:153K  onsemi
ntd4804na-1g.pdf pdf_icon

NTD4804N

NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 4.0 mW @ 10 V 25 V 117 A Applications 5.5 mW @ 4.5 V CPU Power

 0.3. Size:275K  onsemi
ntd4804n-d.pdf pdf_icon

NTD4804N

NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m @10V CPU Power Delivery 30 V 117 A 5.5 m @4.5V DC--DC

Otros transistores... NTD25P03L , NTD2955 , NTD3055-094 , NTD3055-150 , NTD3055L104 , NTD3055L170 , NTD40N03R , NTD4302 , AON6380 , NTD4805N , NTD4806N , NTD4808N , NTD4809N , NTD4810N , NTD4813N , NTD4813NH , NTD4815N .

History: SWT38N65K | WSF6012

 

 

 


History: SWT38N65K | WSF6012

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