2SK951-01
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK951-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 800
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 2.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5
V
trⓘ - Tiempo de subida: 60
nS
Cossⓘ - Capacitancia
de salida: 60
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7
Ohm
Paquete / Cubierta:
TO220
- Selección de transistores por parámetros
2SK951-01
Datasheet (PDF)
7.1. Size:138K fuji
2sk951-m.pdf 
"2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.1. Size:145K 1
2sk959.pdf
Discontinued product.Discontinued product.Discontinued product.
9.2. Size:143K 1
2sk958.pdf
Discontinued product.Discontinued product.Discontinued product.
9.3. Size:142K 1
2sk956.pdf
Discontinued product.Discontinued product.Discontinued product.
9.5. Size:142K 1
2sk955.pdf
Discontinued product.Discontinued product.Discontinued product.
9.6. Size:227K 1
2sk950.pdf
FUJI POWER MOSFET2SK950N-CHANNEL SILICON POWER MOSFETF- I SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageApplications Switching regulatorsUPS DC-DC convertersGeneral purpose power amplifier3. SourceJEDECTO-220ABEIAJSC-46Equivalent circuit schematicMaximum ratings and characterist
9.7. Size:145K 1
2sk953.pdf
Discontinued product.Discontinued product.Discontinued product.
9.8. Size:142K fuji
2sk957-m.pdf
"2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.12. Size:201K inchange semiconductor
2sk959.pdf
isc N-Channel MOSFET Transistor 2SK959DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
9.13. Size:197K inchange semiconductor
2sk958.pdf
isc N-Channel MOSFET Transistor 2SK958DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
9.14. Size:203K inchange semiconductor
2sk956.pdf
isc N-Channel MOSFET Transistor 2SK956DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co
9.15. Size:202K inchange semiconductor
2sk954.pdf
isc N-Channel MOSFET Transistor 2SK954DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
9.16. Size:202K inchange semiconductor
2sk955.pdf
isc N-Channel MOSFET Transistor 2SK955DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co
9.17. Size:202K inchange semiconductor
2sk950.pdf
isc N-Channel MOSFET Transistor 2SK950DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
9.18. Size:279K inchange semiconductor
2sk957-mr.pdf
isc N-Channel MOSFET Transistor 2SK957-MRFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
9.19. Size:200K inchange semiconductor
2sk952.pdf
isc N-Channel MOSFET Transistor 2SK952DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel
9.20. Size:204K inchange semiconductor
2sk953.pdf
isc N-Channel MOSFET Transistor 2SK953DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel
Otros transistores... 2SK946
, 2SK947
, 2SK947-MR
, 2SK948
, 2SK949
, 2SK949-MR
, 2SK950
, 2SK951
, 8N60
, 2SK952
, 2SK953
, 2SK954
, 2SK955
, 2SK956
, 2SK956-01
, 2SK957
, 2SK957-01
.
History: VS4020AP
