NTD4809N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTD4809N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21.3 nS
   Cossⓘ - Capacitancia de salida: 315 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET NTD4809N

NTD4809N Datasheet (PDF)

..1. Size:117K onsemi
ntd4809n nvd4809n.pdf

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

0.1. Size:150K onsemi
ntd4809n-1g.pdf

NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv

0.2. Size:330K onsemi
ntd4809nhg.pdf

NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC

0.3. Size:110K onsemi
ntd4809na-1g.pdf

NTD4809NAAdvance InformationPower MOSFET25 V, 58 A, Single N- Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices9.0 mW @ 10 V25 V 58 AApplications14 mW @ 4.5 V CPU Power D

0.4. Size:270K onsemi
ntd4809n-d.pdf

NTD4809NPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V CPU Power Delivery30 V 58 A14 m @4.5 V DC--DC Co

0.5. Size:153K onsemi
ntd4809nh-1g.pdf

NTD4809NH, NVD4809NHPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NHV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 m

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