NTD4809N Todos los transistores

 

NTD4809N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4809N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21.3 nS

Cossⓘ - Capacitancia de salida: 315 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: DPAK

 Búsqueda de reemplazo de NTD4809N MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTD4809N datasheet

 ..1. Size:117K  onsemi
ntd4809n nvd4809n.pdf pdf_icon

NTD4809N

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A

 0.1. Size:150K  onsemi
ntd4809n-1g.pdf pdf_icon

NTD4809N

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V DC-DC Conv

 0.2. Size:330K  onsemi
ntd4809nhg.pdf pdf_icon

NTD4809N

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m @10V 30 V 58 A CPU Power Delivery 12.5 m @4.5 V DC--DC

 0.3. Size:110K  onsemi
ntd4809na-1g.pdf pdf_icon

NTD4809N

NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 9.0 mW @ 10 V 25 V 58 A Applications 14 mW @ 4.5 V CPU Power D

Otros transistores... NTD3055L104 , NTD3055L170 , NTD40N03R , NTD4302 , NTD4804N , NTD4805N , NTD4806N , NTD4808N , AON7506 , NTD4810N , NTD4813N , NTD4813NH , NTD4815N , NTD4855N , NTD4856N , NTD4857N , NTD4858N .

History: ZXMD63C03X | SL2314 | SL2328A | SML20B67 | R6020ENZ1 | RDX120N50FU6

 

 

 

 

↑ Back to Top
.