NTD4857N Todos los transistores

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NTD4857N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4857N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56.6 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Corriente continua de drenaje (Id): 78 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0057 Ohm

Empaquetado / Estuche: DPAK

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NTD4857N Datasheet (PDF)

1.1. ntd4857n.pdf Size:271K _onsemi

NTD4857N
NTD4857N

NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 5.7 m? @10V 25 V 78 A Applications 8.0 m? @4.5 V VCORE Applications D

4.1. ntd4856n.pdf Size:296K _onsemi

NTD4857N
NTD4857N

NTD4856N Power MOSFET 25 V, 89 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 4.7 m? @10V 25 V 89 A Applications 6.8 m? @4.5 V VCORE Applications D

4.2. ntd4858n.pdf Size:300K _onsemi

NTD4857N
NTD4857N

NTD4858N Power MOSFET 25 V, 73 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 6.2 m? @10V 25 V 73 A Applications 9.3 m? @4.5 V VCORE Applications D

 4.3. ntd4855n-d.pdf Size:262K _onsemi

NTD4857N
NTD4857N

NTD4855N Power MOSFET 25 V, 98 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 4.3 m? @10V 25 V 98 A Applications 6.0 m? @4.5 V VCORE Applications D

Otros transistores... NTD4808N , NTD4809N , NTD4810N , NTD4813N , NTD4813NH , NTD4815N , NTD4855N , NTD4856N , BF245C , NTD4858N , NTD4860N , NTD4863N , NTD4865N , NTD4904N , NTD4906N , NTD4909N , NTD4910N .

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