NTD4906N Todos los transistores

 

NTD4906N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD4906N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 54 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 642 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: DPAK
 

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NTD4906N Datasheet (PDF)

 ..1. Size:123K  onsemi
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NTD4906N

NTD4906NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.5 mW @ 10 V CPU Power Delivery30 V 54 A8.0 mW @ 4.5 V DC-DC Con

 8.1. Size:86K  onsemi
 ntd4904n.pdf pdf_icon

NTD4906N

NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv

 8.2. Size:141K  onsemi
 ntd4904n-1g ntd4904n.pdf pdf_icon

NTD4906N

NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv

 8.3. Size:138K  onsemi
 ntd4909n-1g ntd4909n.pdf pdf_icon

NTD4906N

NTD4909NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications8.0 mW @ 10 V CPU Power Delivery30 V 41 A12 mW @ 4.5 V DC-DC Conv

MOSTRAR MÁS

Otros transistores... NTD4855N , NTD4856N , NTD4857N , NTD4858N , NTD4860N , NTD4863N , NTD4865N , NTD4904N , 2N60 , NTD4909N , NTD4910N , NTD4913N , NTD4960N , NTD4963N , NTD4965N , NTD4969N , NTD4970N .

History: G22 | MMBFJ212 | L2N7002LT1G | 25P06 | LNTR4003NLT1G | JFTJ105

 

 
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