2SK953 Todos los transistores

 

2SK953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK953

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 80 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 7 Ohm

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de MOSFET 2SK953

 

2SK953 Datasheet (PDF)

1.1. 2sk953.pdf Size:204K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK953 DESCRIPTION ·Drain Current –I =2.5A@ T =25℃ D C ·Drain Source Voltage- : V = 800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel

5.1. 2sk957-mr.pdf Size:141K _update

2SK953
2SK953



5.2. 2sk956-01r.pdf Size:163K _update

2SK953
2SK953



 5.3. 2sk951-m.pdf Size:138K _update

2SK953
2SK953

查询"2SK951M"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK951M"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK951M"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003

5.4. 2sk957-m.pdf Size:142K _update

2SK953
2SK953

查询"2SK957M"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK957M"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK957M"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003

 5.5. 2sk952.pdf Size:132K _fuji

2SK953
2SK953

5.6. 2sk951mr.pdf Size:135K _fuji

2SK953
2SK953

5.7. 2sk958.pdf Size:197K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK958 DESCRIPTION ·Drain Current –I =2A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

5.8. 2sk952.pdf Size:200K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK952 DESCRIPTION ·Drain Current –I =2.5A@ T =25℃ D C ·Drain Source Voltage- : V = 800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel

5.9. 2sk950.pdf Size:202K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK950 DESCRIPTION ·Drain Current –I = 6A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

5.10. 2sk954.pdf Size:202K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK954 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

5.11. 2sk955.pdf Size:202K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK955 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co

5.12. 2sk956.pdf Size:203K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK956 DESCRIPTION ·Drain Current –I =9A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co

5.13. 2sk959.pdf Size:201K _inchange_semiconductor

2SK953
2SK953

isc N-Channel MOSFET Transistor 2SK959 DESCRIPTION ·Drain Current –I =2A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Otros transistores... 2SK947-MR , 2SK948 , 2SK949 , 2SK949-MR , 2SK950 , 2SK951 , 2SK951-01 , 2SK952 , IRFP150N , 2SK954 , 2SK955 , 2SK956 , 2SK956-01 , 2SK957 , 2SK957-01 , 2SK958 , 2SK959 .

 

 
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