NTD5803N Todos los transistores

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NTD5803N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD5803N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0072 Ohm

Empaquetado / Estuche: DPAK

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NTD5803N Datasheet (PDF)

1.1. ntd5803n-d.pdf Size:111K _onsemi

NTD5803N
NTD5803N

NTD5803N Power MOSFET 40 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http://onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10.1 mW @ 5.0 V 54 A 40 V CCFL Backlight 7.2 mW @ 10 V 76 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchronous Rectificat

4.1. ntd5802n-d.pdf Size:109K _onsemi

NTD5803N
NTD5803N

NTD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V These are Pb-Free Devices 7.8 mW @ 5.0 V 50 A Applicat

4.2. ntd5804n.pdf Size:127K _onsemi

NTD5803N
NTD5803N

NTD5804N Power MOSFET 40 V, 69 A, Single N-Channel, DPAK Features • Low RDS(on) • High Current Capability http://onsemi.com • Avalanche Energy Specified • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 12 mW @ 5.0 V 40 V 69 A • CCFL Backlight 8.5 mW @ 10 V • DC Motor Control • Class D Amplifier D • Power Supply Secondary Side Synchronous Re

4.3. ntd5807n-d.pdf Size:112K _onsemi

NTD5803N
NTD5803N

NTD5807N Power MOSFET 40 V, 23 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http://onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 37 mW @ 4.5 V 16 A 40 V CCFL Backlight 31 mW @ 10 V 23 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchronous Rectification

4.4. ntd5805n.pdf Size:127K _onsemi

NTD5803N
NTD5803N

NTD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features • Low RDS(on) • High Current Capability http://onsemi.com • Avalanche Energy Specified • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 16 mW @ 5.0 V 40 V 51 A • LED Backlight Driver 9.5 mW @ 10 V • CCFL Backlight • DC Motor Control D • Power Supply Secondary Side Synchronous

4.5. ntd5806n.pdf Size:125K _onsemi

NTD5803N
NTD5803N

NTD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK Features • Low RDS(on) • High Current Capability http://onsemi.com • Avalanche Energy Specified • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 26 mW @ 4.5 V 40 V 33 A • CCFL Backlight 19 mW @ 10 V • DC Motor Control • Power Supply Secondary Side Synchronous Rectification D MAXIMUM RAT

Otros transistores... NTD4965N , NTD4969N , NTD4970N , NTD5406N , NTD5407N , NTD5413N , NTD5414N , NTD5802N , IRF9Z34 , NTD5804N , NTD5805N , NTD5806N , NTD5807N , NTD5862N , NTD5865N , NTD5865NL , NTD5867NL .

 


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