NTD6415ANL Todos los transistores

 

NTD6415ANL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD6415ANL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 91 nS

Cossⓘ - Capacitancia de salida: 156 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: DPAK

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NTD6415ANL datasheet

 ..1. Size:72K  onsemi
ntd6415anl nvd6415anl.pdf pdf_icon

NTD6415ANL

NTD6415ANL, NVD6415ANL N-Channel Power MOSFET 100 V, 23 A, 56 mW, Logic Level Features Low RDS(on) www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 56 mW @ 4.5 V 100 V 23 A These Devices are Pb-Free and are RoHS

 0.1. Size:259K  onsemi
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NTD6415ANL

NTD6415ANL N--Channel Power MOSFET 100 V, 23 A, 56 m , Logic Level Features Low RDS(on) http //onsemi.com 100% Avalanche Tested AEC--Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 56 m @4.5 V 100 V 23 A 52 m @10V MAXIMUM RATINGS (TJ =25 C unless otherwise noted) Parameter Symbol Value Uni

 5.1. Size:139K  onsemi
ntd6415an-1g.pdf pdf_icon

NTD6415ANL

NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6415AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 55 mW @ 10 V 23 A Parameter Symbol Value

 5.2. Size:138K  onsemi
ntd6415an.pdf pdf_icon

NTD6415ANL

NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant ID MAX V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit 100 V 55 mW @ 10 V 23 A Drain-to-Source Voltage VDSS 100 V Gate

Otros transistores... NTD5806N , NTD5807N , NTD5862N , NTD5865N , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , EMB04N03H , NTD6416AN , NTD6416ANL , NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 .

History: IXFK26N120P | IXFK25N90 | J308 | IXFK32N100P | PN5432 | IRF1503PBF

 

 

 


History: IXFK26N120P | IXFK25N90 | J308 | IXFK32N100P | PN5432 | IRF1503PBF

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