NTF3055-100 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTF3055-100  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: SOT223

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NTF3055-100 datasheet

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 ntf3055-100 nvf3055-100.pdf pdf_icon

NTF3055-100

NTF3055-100, NVF3055-100 MOSFET Power, N-Channel, SOT-223 3.0 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 110 mW Features NVF Prefix for Automotive and Other Applications Requiring N-Channel Unique Site and Control Change Requirements; AE

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NTF3055-100

NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V Features RDS(on) = 110 mW Pb-Free Packages are Available N-Channel D Applications Power Supplies Converters G Power Mo

 0.1. Size:103K  onsemi
 ntf3055-100t1 nvf3055-100.pdf pdf_icon

NTF3055-100

NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 110 mW Features N-Channel AEC-Q101 Qualified and PPAP Capable - NVF3055-100 D These Devices are Pb-Free and are RoHS Compli

 0.2. Size:895K  cn vbsemi
 ntf3055-100t.pdf pdf_icon

NTF3055-100

NTF3055-100T www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un

MOSTRAR MÁS

Otros transistores... NTD6415AN, NTD6415ANL, NTD6416AN, NTD6416ANL, NTD70N03R, NTE4151P, NTE4153N, NTF2955, 2SK2842, NTF3055L108, NTF5P03T3, NTF6P02, NTGD1100L, NTGD3148N, NTGD4161P, NTGD4167C, NTGS3130N