NTGS3441 Todos los transistores

 

NTGS3441 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTGS3441

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.35 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.069 Ohm

Empaquetado / Estuche: TSOP6

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NTGS3441 Datasheet (PDF)

1.1. ntgs3441p-d.pdf Size:64K _onsemi

NTGS3441
NTGS3441

NTGS3441P Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6 Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses http://onsemi.com TSOP-6 Surface Mount Package This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 91 mW @ 4.5 V High Side Switch in DC-DC Converters -20 V 144 mW @ 2.7 V -3.16 A Battery Management 1

1.2. ntgs3441t1.pdf Size:136K _onsemi

NTGS3441
NTGS3441

NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) 1 AMPERE Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 90 mW Pb-Free Package is Available Applications P-Channel Power Management in Portable and Battery-Powered Products, 1 2 5 6 i.e.: Cellular and Cordless Telephones

 3.1. ntgs3443t1.pdf Size:103K _onsemi

NTGS3441
NTGS3441

NTGS3443T1 Power MOSFET 4.4 Amps, 20 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) 4.4 AMPERES Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 65 mW Pb-Free Package is Available Applications P-Channel 1 2 5 6 Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Tele

3.2. ntgs3446.pdf Size:136K _onsemi

NTGS3441
NTGS3441

NTGS3446 Power MOSFET 20 V, 5.1 A Single N-Channel, TSOP6 Features Ultra Low RDS(on) http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive V(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified 20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available N-Channel Appl

Otros transistores... NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , 2N7000 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , NTHD3100C .

 
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