NTGS3455 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTGS3455 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TSOP6
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NTGS3455 datasheet
ntgs3455t1.pdf
NTGS3455T1 MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6 Features http //onsemi.com Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -30 V 100 mW @ -10 V -3.5 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products,
ntgs3443bt1g.pdf
NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Rating http //onsemi.com Fast Switching This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in -20 V 90 mW @ -2.7 V -3.1 A Portable Equipment 100 mW @ -2.5 V
ntgs3447pt1g.pdf
NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX Applications Battery Switch and Load Management Applications in Portable 40 mW @ -4.5 V -4.7 A Equipment -12 V 53 mW @ -2.5 V -4.1 A High Side Load Switch PA Switch 72
ntgs3441t1 nvgs3441.pdf
NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P-Channel TSOP-6 Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package 1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique 20 VOLTS Site and Control Change Requirements; AEC-Q101 Qualified and RDS(on) = 90 mW PPAP Capable
Otros transistores... NTGD4161P, NTGD4167C, NTGS3130N, NTGS3136P, NTGS3433, NTGS3441, NTGS3443, NTGS3446, IRLZ44N, NTGS4111P, NTGS4141N, NTGS5120P, NTHC5513, NTHD3100C, NTHD3101F, NTHD3102C, NTHD3133PF
Parámetros del MOSFET. Cómo se afectan entre sí.
History: JCS650C | R6006JND3
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