NTGS3455 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTGS3455
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de NTGS3455 MOSFET
NTGS3455 Datasheet (PDF)
ntgs3455t1.pdf

NTGS3455T1MOSFET-3.5 Amps, -30 VoltsP-Channel TSOP-6Features http://onsemi.com Ultra Low RDS(on)V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life-30 V 100 mW @ -10 V -3.5 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is AvailableP-Channel1 2 5 6ApplicationsDRAIN Power Management in Portable and Battery-Powered Products,
ntgs3443bt1g.pdf

NTGS3443BPower MOSFET-20 V, -4.2 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in-20 V 90 mW @ -2.7 V -3.1 APortable Equipment100 mW @ -2.5 V
ntgs3447pt1g.pdf

NTGS3447PPower MOSFET-12 V, -5.3 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratinghttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(on) MAX ID MAXApplications Battery Switch and Load Management Applications in Portable40 mW @ -4.5 V -4.7 AEquipment-12 V 53 mW @ -2.5 V -4.1 A High Side Load Switch PA Switch 72
ntgs3441t1 nvgs3441.pdf

NTGS3441, NVGS3441Power MOSFET1 Amp, 20 Volts, P-Channel TSOP-6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique20 VOLTSSite and Control Change Requirements; AEC-Q101 Qualified andRDS(on) = 90 mWPPAP Capable
Otros transistores... NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , IRFP260N , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , NTHD3100C , NTHD3101F , NTHD3102C , NTHD3133PF .
History: BUZ308 | CEU75A3 | IRFP350 | HR3N187 | CED20P10 | HFP13N50 | 2N6783-SM
History: BUZ308 | CEU75A3 | IRFP350 | HR3N187 | CED20P10 | HFP13N50 | 2N6783-SM



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTK3005L | JMTK3005C | JMTK3005B | JMTK3005A | JMTK3004A | JMTK3003A | JMTK3002B | JMTK290N06A | JMTK2007A | JMTK2006A | JMTK170N10A | JMTK160P03A | JMTK1404A1 | JMTK130P04A | JMTK120N03A | JMTK110N06A
Popular searches
d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m | 2sk1058 | ss8550