NTGS3455 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTGS3455
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 2.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15
nS
Cossⓘ - Capacitancia
de salida: 220
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1
Ohm
Paquete / Cubierta:
TSOP6
Búsqueda de reemplazo de NTGS3455 MOSFET
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Selección ⓘ de transistores por parámetros
NTGS3455 datasheet
0.1. Size:104K onsemi
ntgs3455t1.pdf 
NTGS3455T1 MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6 Features http //onsemi.com Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -30 V 100 mW @ -10 V -3.5 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products,
8.1. Size:90K onsemi
ntgs3443bt1g.pdf 
NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Rating http //onsemi.com Fast Switching This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in -20 V 90 mW @ -2.7 V -3.1 A Portable Equipment 100 mW @ -2.5 V
8.2. Size:89K onsemi
ntgs3447pt1g.pdf 
NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX Applications Battery Switch and Load Management Applications in Portable 40 mW @ -4.5 V -4.7 A Equipment -12 V 53 mW @ -2.5 V -4.1 A High Side Load Switch PA Switch 72
8.3. Size:100K onsemi
ntgs3441t1 nvgs3441.pdf 
NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P-Channel TSOP-6 Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package 1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique 20 VOLTS Site and Control Change Requirements; AEC-Q101 Qualified and RDS(on) = 90 mW PPAP Capable
8.4. Size:99K onsemi
ntgs3443t1.pdf 
NTGS3443T1 Power MOSFET 4.4 Amps, 20 Volts P-Channel TSOP-6 http //onsemi.com Features Ultra Low RDS(on) 4.4 AMPERES Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 65 mW Pb-Free Package is Available Applications P-Channel 1 2 5 6 Power Management in Portable and Battery-Powered Products, i.e. Cellular and
8.5. Size:89K onsemi
ntgs3441bt1g.pdf 
NTGS3441B Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Rating http //onsemi.com This is a Pb-Free Device Applications V(BR)DSS RDS(on) MAX ID MAX Battery Switch and Load Management Applications in Portable 90 mW @ -4.5 V -3.0 A Equipment -20 V High Side Load Switch 130 mW @ -2.5 V -2.4 A Portable D
8.6. Size:106K onsemi
ntgs3443 nvgs3443.pdf 
NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts P-Channel TSOP-6 http //onsemi.com Features Ultra Low RDS(on) 4.4 AMPERES Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 65 mW These Devices are Pb-Free and are RoHS Compliant NVGS Prefix for Automotive and Other Applications Requiring P-Channel Unique Site a
8.7. Size:132K onsemi
ntgs3433t1.pdf 
NTGS3433T1 MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 http //onsemi.com Features Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -12 V 75 mW @ -4.5 V -3.3 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products,
8.8. Size:136K onsemi
ntgs3446 ntgs3446t1.pdf 
NTGS3446 Power MOSFET 20 V, 5.1 A Single N-Channel, TSOP6 Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive V(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified 20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available
8.9. Size:64K onsemi
ntgs3441p-d ntgs3441pt1g.pdf 
NTGS3441P Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6 Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses http //onsemi.com TSOP-6 Surface Mount Package This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 91 mW @ 4.5 V High Side Switch in DC-DC Converters -20 V 144 mW @ 2.7 V -3.16 A Batter
8.10. Size:115K onsemi
ntgs3433t1g.pdf 
NTGS3433T1 MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 http //onsemi.com Features Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -12 V 75 mW @ -4.5 V -3.3 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products,
8.11. Size:834K cn vbsemi
ntgs3443t1g.pdf 
NTGS3443T1G www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P
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History: APJ14N65F
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