NTGS4141N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTGS4141N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TSOP6

Búsqueda de reemplazo de MOSFET NTGS4141N

NTGS4141N Datasheet (PDF)

..1. Size:202K onsemi
ntgs4141n nvgs4141n.pdf

NTGS4141N, NVGS4141NMOSFET Power, Single,N-Channel, TSOP-630 V, 7.0 AFeatures Low RDS(on)http://onsemi.com Low Gate Charge NV Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) TYP ID MAXSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable21.5 mW @ 10 V Pb-Free Package is Available30 V 7.0 A30 mW @ 4.5

..2. Size:106K onsemi
ntgs4141n.pdf

NTGS4141NPower MOSFET30 V, 7.0 A, Single N-Channel, TSOP-6Features Low RDS(on) Low Gate Chargehttp://onsemi.com Pb-Free Package is AvailableApplications V(BR)DSS RDS(on) TYP ID MAX Load Switch21.5 mW @ 10 V Notebook PC30 V 7.0 A Desktop PC30 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelRating Symbol Value UnitDrain 1

0.1. Size:108K onsemi
ntgs4141nt1g.pdf

8.1. Size:203K onsemi
ntgs4111p nvgs4111p.pdf

NTGS4111P, NVGS4111PMOSFET Power, Single,P-Channel, TSOP-6-30 V, -4.7 AFeatureshttp://onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable ApplicationsV(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space38 mW @ -10 V Improved Efficiency for Battery Applications-30 V -4.7 A68 mW @ -4.5 V

8.2. Size:138K onsemi
ntgs4111p.pdf

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

8.3. Size:134K onsemi
ntgs4111pt1.pdf

8.4. Size:858K cn vbsemi
ntgs4111pt.pdf

NTGS4111PTwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-

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