NTHD3102C MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTHD3102C datasheet

..1. Size:95K onsemi
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NTHD3102C Power MOSFET Complementary, 20 V, +5.5 A /-4.2 A, ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics ID MAX V(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve

7.1. Size:116K onsemi
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NTHD3101F Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics 64 mW @ -4.5 V -20 V -4.4 A Indepe

7.2. Size:66K onsemi
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NTHD3101F Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics V(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E

7.3. Size:148K onsemi
nthd3100c.pdf pdf_icon

AND PIN A NTHD3100C Power MOSFET 20 V, +3.9 A /-4.4 A, Complementary ChipFETt Features http //onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics 58 mW @ 4.5 V N-Channel Trench P-Channel for Low On Resistance 3.9 A 20 V 77 mW @ 2

Otros transistores... NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , NTHD3100C , NTHD3101F , 10N60 , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , NTHS4166N , NTHS5404 .