NTHD4102P Todos los transistores

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NTHD4102P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTHD4102P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 4.1 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.064 Ohm

Empaquetado / Estuche: ChipFET8

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NTHD4102P Datasheet (PDF)

1.1. nthd4102p-d.pdf Size:64K _onsemi

NTHD4102P
NTHD4102P

NTHD4102P Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFETt Features Offers an Ultra Low RDS(ON) Solution in the ChipFET Package http://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(ON) TYP ID MAX Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics 64 mW @ -4.5 V Simplifies Circuit Des

5.1. nthd4401p-d.pdf Size:74K _onsemi

NTHD4102P
NTHD4102P

NTHD4401P Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFETt Features Low RDS(on) and Fast Switching Speed in a ChipFET Package http://onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 130 mW @ -4.5 V -20 V -3.0 A Ap

5.2. nthd4502n-d.pdf Size:67K _onsemi

NTHD4102P
NTHD4102P

NTHD4502N Power MOSFET 30 V, 3.9 A, Dual N-Channel ChipFETt Features Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. http://onsemi.com Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for V(BR)DSS RDS(on) TYP ID MAX Appl

5.3. nthd4n02f-d.pdf Size:72K _onsemi

NTHD4102P
NTHD4102P

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N-Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Better Thermals V(BR)DSS RDS(on) TYP ID MAX Super Low Gate Charge MOSFET 60 mW @ 4.5 V Ultra Low VF Schottky 20 V 3.9 A 80 mW @ 2.5 V P

5.4. nthd4508n-d.pdf Size:55K _onsemi

NTHD4102P
NTHD4102P

NTHD4508N Power MOSFET 20 V, 4.1 A, Dual N-Channel ChipFETt Features Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 http://onsemi.com Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX Applications 60 mW @ 4.5 V 20 V 4.1 A DC-DC Buck/Boost Converters 80

5.5. nthd4p02f.pdf Size:83K _onsemi

NTHD4102P
NTHD4102P

NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circuit Design

Otros transistores... NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , NTHD3100C , NTHD3101F , NTHD3102C , NTHD3133PF , IRFP450 , NTHD4502N , NTHD4508N , NTHD4P02 , NTHS4101P , NTHS4166N , NTHS5404 , NTHS5441T1 , NTHS5443 .

 


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