NTHS5441T1 Todos los transistores

 

NTHS5441T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTHS5441T1

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: CHIPFET8

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NTHS5441T1 datasheet

 0.1. Size:66K  onsemi
 nths5441pt1g nths5441t1g nths5441t1-d.pdf pdf_icon

NTHS5441T1

NTHS5441 Power MOSFET -20 V, -5.3 A, P-Channel ChipFET] Features Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive V(BR)DSS RDS(on) TYP ID MAX Miniature ChipFET Surface Mount Package -20 V 46 mW @ -4.5 V -5.3 A Pb-Free Package is Available S Applications Power Management in Portable and Battery-Powered Products; i

 6.1. Size:117K  onsemi
 nths5441.pdf pdf_icon

NTHS5441T1

NTHS5441 MOSFET Power, P-Channel, ChipFET -20 V, -5.3 A Features http //onsemi.com Low RDS(on) Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive -20 V 46 mW @ -4.5 V -5.3 A Miniature ChipFET Surface Mount Package Pb-Free Package is Available S Applications G Power Management in Portable and Battery-Powered Pro

 7.1. Size:200K  onsemi
 nths5445t1.pdf pdf_icon

NTHS5441T1

NTHS5445T1 Power MOSFET P-Channel ChipFETE 5.2 Amps, 8 Volts Features http //onsemi.com Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space 5.2 AMPS 8 VOLTS Applications Power Management in Portable and Battery-Powered Products; i.e., RDS(on) = 35 mW Cellular and Cordless Telephones and PCMCIA Cards S

 7.2. Size:68K  onsemi
 nths5443t1-d nths5443t1.pdf pdf_icon

NTHS5441T1

NTHS5443 Power MOSFET -20 V, -4.9 A, P-Channel ChipFETt Features Low RDS(on) for Higher Efficiency Logic Level Gate Drive http //onsemi.com Miniature ChipFET Surface Mount Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available Applications -20 V 56 mW @ -4.5 -4.9 A Power Management in Portable and Battery-Powered Products; i.e., Cellula

MOSTRAR MÁS

Otros transistores... NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , NTHS4166N , NTHS5404 , IRF9540 , NTHS5443 , NTJD1155L , NTJD4001N , NTJD4105C , NTJD4152P , NTJD4158C , NTJD4401N , NTJD5121N .

History: WMM030N06HG4 | SSI1N50A | SSI2N60A | WMN16N70SR | WMO26N65F2 | WSD3066DN | WMM26N65F2

 

 

 

 

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