NTJD4401N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTJD4401N
   Código: TD*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.63 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 1.3 nC
   trⓘ - Tiempo de subida: 227 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.375 Ohm
   Paquete / Cubierta: SC88 SOT363

Búsqueda de reemplazo de MOSFET NTJD4401N

NTJD4401N Datasheet (PDF)

..1. Size:67K onsemi
ntjd4401n nvjd4401n.pdf

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

..2. Size:101K onsemi
ntjd4401n.pdf

NTJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)http://onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available0.29 W @ 4.5 VApplications 20 V 0.63 A0.36 W @ 2.5 V Load Power Switching Li-Ion

9.1. Size:142K onsemi
ntjd4158c.pdf

NTJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Featureshttp://onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 VN-Ch This is a Pb-Free Device 0.25 A30 V1.5 W @ 2.5 VApplications215 mW @ -4.5 VP-Ch-0.88 A-20 V

9.2. Size:192K onsemi
ntjd4001n nvtjd4001n.pdf

NTJD4001N, NVTJD4001NMOSFET Dual, N-Channel,Small Signal, SC-8830 V, 250 mAFeatureswww.onsemi.com Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC Q101 Qualified - NVTJD4001N 1.0 W @ 4.0 V250 mA30 V These Devices are Pb-Free and are RoHS Compliant1.5 W @ 2.5 VApplicatio

9.3. Size:149K onsemi
ntjd4105c.pdf

NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performancehttp://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available0.29 W @ 4.5 VN-Ch

9.4. Size:126K onsemi
ntjd4152p nvjd4152p.pdf

NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an

9.5. Size:88K onsemi
ntjd4152p.pdf

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88http://onsemi.comFeatures Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V

9.6. Size:72K onsemi
ntjd4105ct1g.pdf

NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Devicehttp://onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm)0.29 W @ 4.5 VN-Ch 20 V 0.63 A Pb-Free Package M

9.7. Size:142K onsemi
ntjd4158c nvjd4158c.pdf

NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont

9.8. Size:110K onsemi
ntjd4001n.pdf

NTJD4001NSmall Signal MOSFET30 V, 250 mA, Dual N-Channel, SC-88Features Low Gate Charge for Fast Switchinghttp://onsemi.com Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate1.0 W @ 4.0 V Pb-Free Package is Available250 mA30 V1.5 W @ 2.5 VApplications Low Side Load SwitchSOT-363 Li-Ion Battery Supplied Devi

9.9. Size:72K onsemi
ntjd4152pt1g.pdf

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V Load/Power Mana

9.10. Size:2807K cn tech public
tpntjd4105ct1g.pdf