NTJD4401N Todos los transistores

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

NTJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) http //onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available 0.29 W @ 4.5 V Applications 20 V 0.63 A 0.36 W @ 2.5 V Load Power Switching Li-Ion

NTJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features http //onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V N-Ch This is a Pb-Free Device 0.25 A 30 V 1.5 W @ 2.5 V Applications 215 mW @ -4.5 V P-Ch -0.88 A -20 V

NTJD4001N, NVTJD4001N MOSFET Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features www.onsemi.com Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6 V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC Q101 Qualified - NVTJD4001N 1.0 W @ 4.0 V 250 mA 30 V These Devices are Pb-Free and are RoHS Compliant 1.5 W @ 2.5 V Applicatio

NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performance http //onsemi.com ESD Protected Gate - ESD Rating Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available 0.29 W @ 4.5 V N-Ch

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an

NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 http //onsemi.com Features Leading Trench Technology for Low RDS(ON) Performance V(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent) 215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available -20 V 345 mW @ -2.5 V -0.88 A Applications 600 mW @ -1.8 V

NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features Complementary N and P Channel Device http //onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating Class 1 V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm) 0.29 W @ 4.5 V N-Ch 20 V 0.63 A Pb-Free Package M

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont

NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N-Channel, SC-88 Features Low Gate Charge for Fast Switching http //onsemi.com Small Footprint - 30% Smaller than TSOP-6 V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate 1.0 W @ 4.0 V Pb-Free Package is Available 250 mA 30 V 1.5 W @ 2.5 V Applications Low Side Load Switch SOT-363 Li-Ion Battery Supplied Devi

NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features Leading Trench Technology for Low RDS(ON) Performance V(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent) 215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available -20 V 345 mW @ -2.5 V -0.88 A Applications 600 mW @ -1.8 V Load/Power Mana