2SK959 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK959
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 Vtrⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8.5 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET 2SK959
2SK959 Datasheet (PDF)
2sk959.pdf
isc N-Channel MOSFET Transistor 2SK959DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
2sk950.pdf
FUJI POWER MOSFET2SK950N-CHANNEL SILICON POWER MOSFETF- I SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageApplications Switching regulatorsUPS DC-DC convertersGeneral purpose power amplifier3. SourceJEDECTO-220ABEIAJSC-46Equivalent circuit schematicMaximum ratings and characterist
2sk957-m.pdf
"2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
2sk951-m.pdf
"2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
2sk958.pdf
isc N-Channel MOSFET Transistor 2SK958DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
2sk956.pdf
isc N-Channel MOSFET Transistor 2SK956DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co
2sk954.pdf
isc N-Channel MOSFET Transistor 2SK954DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage.high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sk955.pdf
isc N-Channel MOSFET Transistor 2SK955DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co
2sk950.pdf
isc N-Channel MOSFET Transistor 2SK950DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
2sk957-mr.pdf
isc N-Channel MOSFET Transistor 2SK957-MRFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk952.pdf
isc N-Channel MOSFET Transistor 2SK952DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel
2sk953.pdf
isc N-Channel MOSFET Transistor 2SK953DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel
Otros transistores... 2SK953 , 2SK954 , 2SK955 , 2SK956 , 2SK956-01 , 2SK957 , 2SK957-01 , 2SK958 , 60N06 , 2SK960 , 2SK960-MR , 2SK961 , 2SK962 , 2SK962-01 , 2SK963 , 2SK970 , 2SK971 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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