NTLJS3113P Todos los transistores

 

NTLJS3113P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTLJS3113P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.5 nS

Cossⓘ - Capacitancia de salida: 213 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: WDFN6

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NTLJS3113P datasheet

 ..1. Size:130K  onsemi
 ntljs3113p.pdf pdf_icon

NTLJS3113P

NTLJS3113P Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package 40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package 50 mW @

 0.1. Size:126K  onsemi
 ntljs3113pt1g ntljs3113ptag.pdf pdf_icon

NTLJS3113P

NTLJS3113P Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package 40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package 50 mW @

 7.1. Size:117K  onsemi
 ntljs3180pz ntljs3180pztbg.pdf pdf_icon

NTLJS3113P

NTLJS3180PZ Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, ESD, 2x2 mm WDFN Package Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package V(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package 38 mW @ -4.5 V Low Profile (

 8.1. Size:124K  onsemi
 ntljs3a18pz.pdf pdf_icon

NTLJS3113P

NTLJS3A18PZ Power MOSFET -20 V, -8.2 A, mCoolt Single P-Channel, 2.0x2.0x0.8 mm WDFN Package Features WDFN Package with Exposed Drain Pads for Excellent Thermal http //onsemi.com Conduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space Saving V(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on) 18 mW @ -4.5 V ESD Diode-Protected Gate 25 mW @ -2.5 V -20 V -8.2 A T

MOSTRAR MÁS

Otros transistores... NTLGD3502N , NTLGF3402P , NTLJD3115P , NTLJD3119C , NTLJD4116N , NTLJF3117P , NTLJF4156N , NTLJS2103P , NCEP15T14 , NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R , NTMD3P03 , NTMD4184PF , NTMD4820N .

History: SE150110G | SFS06R10DF | AOD4120

 

 

 

 

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