NTMD6N04R2 Todos los transistores

 ..1. Size:78K  onsemi
 ntmd6n04r2.pdf

NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

 7.1. Size:160K  onsemi
 ntmd6n03r2.pdf

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

 7.2. Size:74K  onsemi
 ntmd6n02r2-d.pdf

NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanch

 7.3. Size:332K  onsemi
 ntmd6n03r2g nvmd6n03r2g.pdf

NTMD6N03R2, NVMD6N03R2 Power MOSFET 30 V, 6A, Dual N--Channel SOIC--8 http //onsemi.com Features Designed for use in low voltage, high speed switching applications VDSS RDS(ON) Typ ID Max Ultra Low On--Resistance Provides Higher Efficiency and Extends Battery Life 30 V 24 m @VGS =10V 6.0 A -- RDS(on) = 0.024 , VGS = 10 V (Typ) -- RDS(on) = 0.030 , VGS = 4.5 V (Typ) N-