NTMFS4119N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMFS4119N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: SO8FL

Búsqueda de reemplazo de MOSFET NTMFS4119N

NTMFS4119N Datasheet (PDF)

..1. Size:82K onsemi
ntmfs4119n.pdf

NTMFS4119NPower MOSFET30 V, 30 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Fast Switching Times Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices2.3 mW @ 10 VApplications30 V 30 A3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC DMAXIMUM RATINGS (TJ = 25C

0.1. Size:124K onsemi
ntmfs4119nt1g.pdf

7.1. Size:90K onsemi
ntmfs4108n.pdf

NTMFS4108NPower MOSFET30 V, 35 A, Single N-Channel,SO-8 Flat Lead Packagehttp://onsemi.comFeatures Thermally and Electrically Enhanced Packaging Compatible withhttp://onsemi.comStandard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe AfterV(BR)DSS RDS(on) TYP ID MAXBoard Mounting1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low G

7.2. Size:89K onsemi
ntmfs4120n.pdf

NTMFS4120NPower MOSFET30 V, 31 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ These are Pb-Free Devices(Note 1)Applications3.5 mW @ 10 V30 V 31 A Notebooks, Graphics Cards4.2 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXI

7.3. Size:126K onsemi
ntmfs4122nt1g.pdf

NTMFS4122NPower MOSFET30 V, 23 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Low Inductance SO-8 Package These are Pb-Free DevicesID MAXV(BR)DSS RDS(on) TYP(Note 1)Applications4.6 mW @ 10 V Notebooks, Graphics Cards30 V 23 A6.3 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXIMUM RATINGS (TJ = 25C unl

7.4. Size:153K onsemi
ntmfs4108nt1g.pdf

7.5. Size:89K onsemi
ntmfs4121n.pdf

NTMFS4121NPower MOSFET30 V, 29 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ These are Pb-Free Devices(Note 1)Applications4.0 mW @ 10 V30 V 29 A Notebooks, Graphics Cards5.5 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXI

7.6. Size:84K onsemi
ntmfs4122n.pdf

NTMFS4122NPower MOSFET30 V, 23 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Low Inductance SO-8 Package This is a Pb-Free DeviceID MAXApplicationsV(BR)DSS RDS(on) TYP(Note 1) Notebooks, Graphics Cards4.6 mW @ 10 V DC-DC Converters 30 V 23 A6.3 mW @ 4.5 V Synchronous RectificationMAXIMUM RATINGS (TJ = 25C unless o

7.7. Size:132K onsemi
ntmfs4121nt1g.pdf

NTMFS4121NPower MOSFET30 V, 29 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices4.0 mW @ 10 VApplications30 V 29 A5.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC ConvertersD Synchronous RectificationMAXI

7.8. Size:136K onsemi
ntmfs4120nt1g.pdf

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