NTMFS4821N Todos los transistores

 

NTMFS4821N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4821N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.14 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 282 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00695 Ohm

Encapsulados: SO8FL

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NTMFS4821N datasheet

 ..1. Size:136K  onsemi
ntmfs4821n.pdf pdf_icon

NTMFS4821N

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application

 0.1. Size:137K  onsemi
ntmfs4821nt1g.pdf pdf_icon

NTMFS4821N

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application

 6.1. Size:116K  onsemi
ntmfs4826ne.pdf pdf_icon

NTMFS4821N

NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55

 6.2. Size:115K  onsemi
ntmfs4825nfe.pdf pdf_icon

NTMFS4821N

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V

Otros transistores... NTMD4884NF , NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N , IRF520 , NTMFS4823N , NTMFS4825NFE , NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N .

History: SWSI2N40DC | FDME410NZT

 

 

 


History: SWSI2N40DC | FDME410NZT

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