NTMFS4823N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4823N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 163 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0106 Ohm
Encapsulados: SO8FL
Búsqueda de reemplazo de NTMFS4823N MOSFET
- Selecciónⓘ de transistores por parámetros
NTMFS4823N datasheet
ntmfs4823n.pdf
NTMFS4823N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 10.5 mW @ 10 V 30 V 30 A CPU Pow
ntmfs4823nt1g.pdf
NTMFS4823N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 10.5 mW @ 10 V 30 V 30 A CPU Pow
ntmfs4826ne.pdf
NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55
ntmfs4825nfe.pdf
NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V
Otros transistores... NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N , NTMFS4821N , IRF2807 , NTMFS4825NFE , NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , NTMFS4841N .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2sc536 | d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815 | bu406
