NTMFS4834N
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4834N
Código: 4834N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.31
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 21
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5
V
Qgⓘ - Carga de la puerta: 32
nC
trⓘ - Tiempo de subida: 34
nS
Cossⓘ - Capacitancia
de salida: 960
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003
Ohm
Paquete / Cubierta:
SO8FL
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NTMFS4834N
Datasheet (PDF)
..1. Size:135K onsemi
ntmfs4834n.pdf 
NTMFS4834NPower MOSFET30 V, 130 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications3.0 mW @ 10 V Refer to Application Note AND8195/D30 V130 A4.0 mW @
0.1. Size:134K onsemi
ntmfs4834nt1g.pdf
NTMFS4834NPower MOSFET30 V, 130 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications3.0 mW @ 10 V Refer to Application Note AND8195/D30 V130 A4.0 mW @ 4
6.1. Size:139K onsemi
ntmfs4839n.pdf
NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.
6.2. Size:134K onsemi
ntmfs4837nt1g.pdf
NTMFS4837NPower MOSFET30 V, 74 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesApplicationsV(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D5.0 mW @ 10 V CPU Power Delivery 3
6.3. Size:136K onsemi
ntmfs4835nt1g.pdf
NTMFS4835NPower MOSFET30 V, 104 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications3.5 mW @ 10 V Refer to Application Note AND8195/D30 V104 A CPU Po
6.4. Size:109K onsemi
ntmfs4839nht1g.pdf
NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A
6.5. Size:109K onsemi
ntmfs4839nt1g.pdf
NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.5
6.6. Size:136K onsemi
ntmfs4835n.pdf
NTMFS4835NPower MOSFET30 V, 104 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications3.5 mW @ 10 V Refer to Application Note AND8195/D30 V104 A CPU P
6.7. Size:136K onsemi
ntmfs4837nht1g.pdf
NTMFS4837NHPower MOSFET30 V, 75 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.0 mW @ 10 V30 V75 AApplications 8.0 mW @ 4.5 V Refer to Application
6.8. Size:135K onsemi
ntmfs4836n.pdf
NTMFS4836NPower MOSFET30 V, 90 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V Refer to Application Note AND8195/D30 V90 A6.0 mW @ 4.5
6.9. Size:139K onsemi
ntmfs4839nh.pdf
NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A
6.11. Size:139K onsemi
ntmfs4833nt1g.pdf
NTMFS4833NPower MOSFET30 V, 191 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D2.0 mW @ 10 V30 V191 A CPU Po
6.12. Size:139K onsemi
ntmfs4833ns.pdf
NTMFS4833NSSENSEFET) Power MOSFET30 V, 156 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.2 m
6.13. Size:89K onsemi
ntmfs4833n.pdf
NTMFS4833NPower MOSFET30 V, 191 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These are Pb-Free Devices*ApplicationsV(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V30 V191 A
6.14. Size:136K onsemi
ntmfs4836nt1g.pdf
NTMFS4836NPower MOSFET30 V, 90 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V Refer to Application Note AND8195/D30 V90 A6.0 mW @ 4.5
6.15. Size:134K onsemi
ntmfs4837n-d.pdf
NTMFS4837NPower MOSFET30 V, 74 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*ApplicationsV(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D5.0 mW @ 10 V CPU Power Delivery
6.16. Size:137K onsemi
ntmfs4837nh.pdf
NTMFS4837NHPower MOSFET30 V, 75 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices*5.0 mW @ 10 V30 V75 AApplications 8.0 mW @ 4.5 V Refer to Application
6.17. Size:139K onsemi
ntmfs4833nst1g.pdf
NTMFS4833NSSENSEFET) Power MOSFET30 V, 156 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.2 m
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