NTMFS4836N Todos los transistores

 

NTMFS4836N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4836N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 565 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: SO8FL

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NTMFS4836N datasheet

 ..1. Size:135K  onsemi
ntmfs4836n.pdf pdf_icon

NTMFS4836N

NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5

 0.1. Size:136K  onsemi
ntmfs4836nt1g.pdf pdf_icon

NTMFS4836N

NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5

 6.1. Size:139K  onsemi
ntmfs4839n.pdf pdf_icon

NTMFS4836N

NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.

 6.2. Size:134K  onsemi
ntmfs4837nt1g.pdf pdf_icon

NTMFS4836N

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery 3

Otros transistores... NTMFS4821N , NTMFS4823N , NTMFS4825NFE , NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N , NTMFS4835N , AO3400A , NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , NTMFS4854NS , S60N12RP .

 

 

 


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