2SK961 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK961
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   tonⓘ - Tiempo de encendido: 60 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK961

2SK961 Datasheet (PDF)

..1. Size:225K 1
2sk961.pdf

FUJI POWER MOSFET2SK961N-CHANNEL SILICON POWER MOSFETF- I SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageApplications Switching regulatorsUPS DC-DC convertersGeneral purpose power amplifier3. SourceJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaximum ratings and characteristic

..2. Size:199K inchange semiconductor
2sk961.pdf

isc N-Channel MOSFET Transistor 2SK961DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solenoi

9.1. Size:139K 1
2sk960-mr.pdf

9.2. Size:32K panasonic
2sk963.pdf

Power F-MOS FETs 2SK9632SK963Silicon N-Channel Power F-MOSUnit : mm Features7.0 0.3 3.5 0.23.0 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ)High-speed switching : tf = 45ns(typ)No secondary breakdown1.1 0.1 0.85 0.1 Applications0.75 0.1 0.4 0.1DC-DC converterNon-contact relaySolenoid drive2.3 0.24.6 0.4Motor drive1 2 31 : Gate

9.3. Size:134K fuji
2sk962.pdf

9.4. Size:48K no
2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

9.5. Size:279K inchange semiconductor
2sk960-mr.pdf

isc N-Channel MOSFET Transistor 2SK960-MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Otros transistores... 2SK956 , 2SK956-01 , 2SK957 , 2SK957-01 , 2SK958 , 2SK959 , 2SK960 , 2SK960-MR , AO4468 , 2SK962 , 2SK962-01 , 2SK963 , 2SK970 , 2SK971 , 2SK972 , 2SK973L , 2SK973S .

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