NTMFS4898NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4898NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.72 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 700 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: SO8FL
Búsqueda de reemplazo de MOSFET NTMFS4898NF
NTMFS4898NF Datasheet (PDF)
ntmfs4898nf.pdf
NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V
ntmfs4898nft1g.pdf
NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V
ntmfs4899nf.pdf
NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4897nft1g.pdf
NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V30 V171 AApplications3.0 mW @ 4.5 V C
ntmfs4897nf.pdf
NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.0 mW @ 10 V CPU Power Delivery30 V171
ntmfs4899nft1g.pdf
NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
Otros transistores... NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , NTMFS4854NS , S60N12RP , IRFB3306 , 2SK2828 , NTMFS4921N , NTMFS4923NE , NTMFS4925N , NTMFS4926N , NTMFS4927N , NTMFS4933N , NTMFS4934N .
Liste
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