NTMFS4921N Todos los transistores

 

NTMFS4921N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4921N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.14 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 282 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00695 Ohm

Encapsulados: SO8FL

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NTMFS4921N datasheet

 ..1. Size:117K  onsemi
ntmfs4921n.pdf pdf_icon

NTMFS4921N

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 3

 0.1. Size:105K  onsemi
ntmfs4921nt1g.pdf pdf_icon

NTMFS4921N

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 3

 6.1. Size:110K  onsemi
ntmfs4927nct1g ntmfs4927nt1g.pdf pdf_icon

NTMFS4921N

NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Com

 6.2. Size:112K  onsemi
ntmfs4927-d.pdf pdf_icon

NTMFS4921N

NTMFS4927N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9.0 m

Otros transistores... NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , NTMFS4854NS , S60N12RP , NTMFS4898NF , 2SK2828 , AON7403 , NTMFS4923NE , NTMFS4925N , NTMFS4926N , NTMFS4927N , NTMFS4933N , NTMFS4934N , NTMFS4935N , NTMFS4936N .

History: SGW100N025 | BSZ076N06NS3G

 

 

 

 

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