NTMFS4925N Todos los transistores

 

NTMFS4925N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4925N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.7 nS

Cossⓘ - Capacitancia de salida: 483 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: SO8FL

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NTMFS4925N datasheet

 ..1. Size:171K  onsemi
ntmfs4925n.pdf pdf_icon

NTMFS4925N

NTMFS4925N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

 0.1. Size:108K  onsemi
ntmfs4925nt1g.pdf pdf_icon

NTMFS4925N

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.6 m

 0.2. Size:139K  onsemi
ntmfs4925ne.pdf pdf_icon

NTMFS4925N

NTMFS4925NE Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

 0.3. Size:112K  onsemi
ntmfs4925n-d.pdf pdf_icon

NTMFS4925N

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 6.0 m

Otros transistores... NTMFS4851N , NTMFS4852N , NTMFS4854NS , S60N12RP , NTMFS4898NF , 2SK2828 , NTMFS4921N , NTMFS4923NE , EMB04N03H , NTMFS4926N , NTMFS4927N , NTMFS4933N , NTMFS4934N , NTMFS4935N , NTMFS4936N , NTMFS4937N , NTMFS4939N .

History: LNSC3400 | S8045R | LNND04R120 | NTR4171P | SVT03110PL3 | FDS8949F085

 

 

 

 

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