NTMFS4925N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4925N
Código: 4925N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.7 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 16.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 21.5 nC
Tiempo de subida (tr): 32.7 nS
Conductancia de drenaje-sustrato (Cd): 483 pF
Resistencia entre drenaje y fuente RDS(on): 0.0056 Ohm
Paquete / Cubierta: SO8FL
Búsqueda de reemplazo de MOSFET NTMFS4925N
NTMFS4925N Datasheet (PDF)
ntmfs4925n.pdf
NTMFS4925NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 48 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R
ntmfs4925nt1g.pdf
NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.6 m
ntmfs4925ne.pdf
NTMFS4925NEPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR
ntmfs4925n-d.pdf
NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant6.0 m
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
