NTMFS4927N
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4927N
Código: 4927N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 13.6
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2
V
Qgⓘ - Carga de la puerta: 16
nC
trⓘ - Tiempo de subida: 25.5
nS
Cossⓘ - Capacitancia
de salida: 366
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0073
Ohm
Paquete / Cubierta:
SO8FL
- Selección de transistores por parámetros
NTMFS4927N
Datasheet (PDF)
..1. Size:171K onsemi
ntmfs4927n ntmfs4927nc.pdf 
NTMFS4927N,NTMFS4927NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 38 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.3 mW @ 10 V30 V 38 A These Devices are Pb-Free, Haloge
0.1. Size:110K onsemi
ntmfs4927nct1g ntmfs4927nt1g.pdf
NTMFS4927N,NTMFS4927NCPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCom
5.1. Size:112K onsemi
ntmfs4927-d.pdf
NTMFS4927NPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9.0 m
6.1. Size:108K onsemi
ntmfs4926nt1g.pdf
NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m
6.2. Size:171K onsemi
ntmfs4925n.pdf
NTMFS4925NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 48 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R
6.3. Size:108K onsemi
ntmfs4925nt1g.pdf
NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.6 m
6.4. Size:127K onsemi
ntmfs4926n.pdf
NTMFS4926NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 44 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R
6.5. Size:139K onsemi
ntmfs4925ne.pdf
NTMFS4925NEPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR
6.6. Size:119K onsemi
ntmfs4923ne.pdf
NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A
6.7. Size:108K onsemi
ntmfs4926ne.pdf
NTMFS4926NEPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR
6.8. Size:110K onsemi
ntmfs4922ne.pdf
NTMFS4922NEPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.0 mW @
6.9. Size:105K onsemi
ntmfs4921nt1g.pdf
NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3
6.10. Size:117K onsemi
ntmfs4921n.pdf
NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3
6.11. Size:112K onsemi
ntmfs4926n-d.pdf
NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m
6.12. Size:112K onsemi
ntmfs4925n-d.pdf
NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant6.0 m
6.13. Size:108K onsemi
ntmfs4923net1g.pdf
NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A
Otros transistores... NTMFS4854NS
, S60N12RP
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, NTMFS4923NE
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.
History: 2SK3919-ZK
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