2SK971 Todos los transistores

 

2SK971 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK971
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

2SK971 Datasheet (PDF)

 ..1. Size:43K  1
2sk971.pdf pdf_icon

2SK971

2SK971Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum Ra

 ..2. Size:288K  inchange semiconductor
2sk971.pdf pdf_icon

2SK971

isc N-Channel MOSFET Transistor 2SK971FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.1. Size:46K  1
2sk973l 2sk973s.pdf pdf_icon

2SK971

2SK973 L , 2SK973 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4

 9.2. Size:44K  1
2sk972.pdf pdf_icon

2SK971

2SK972Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum R

Otros transistores... 2SK959 , 2SK960 , 2SK960-MR , 2SK961 , 2SK962 , 2SK962-01 , 2SK963 , 2SK970 , AO4468 , 2SK972 , 2SK973L , 2SK973S , 2SK974L , 2SK974S , 2SK975 , 2SK979 , 2SK981 .

History: 2SK1279 | IRL3714LPBF

 

 
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