2SK971 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK971
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 70 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK971 MOSFET
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2SK971 datasheet
..1. Size:43K 1
2sk971.pdf 
2SK971 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum Ra
..2. Size:288K inchange semiconductor
2sk971.pdf
isc N-Channel MOSFET Transistor 2SK971 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.1. Size:46K 1
2sk973l 2sk973s.pdf
2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 12 Low on-resistance 3 2, 4 High speed switching S type L type Low drive current 4 V gate drive device Can be driven from 5 V source 1. Gate 1 Suitable for motor drive, DC-DC converter, 2. Drain 3. Source power switch and solenoid drive 4
9.2. Size:44K 1
2sk972.pdf
2SK972 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum R
9.3. Size:46K 1
2sk974l 2sk974s.pdf
2SK974 L , 2SK974 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 12 Low on-resistance 3 2, 4 High speed switching S type L type Low drive current 4 V gate drive device Can be driven from 5 V source 1. Gate 1 Suitable for motor drive, DC-DC converter, 2. Drain 3. Source power switch and solenoid drive 4
9.5. Size:109K renesas
r07ds0434ej 2sk975.pdf
Preliminary Datasheet R07DS0434EJ0300 2SK975 (Previous REJ03G0905-0200) Rev.3.00 Silicon N Channel MOS FET Jun 07, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid
9.6. Size:75K renesas
2sk975.pdf
2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous ADE-208-1243) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES
9.8. Size:286K inchange semiconductor
2sk973s.pdf
isc N-Channel MOSFET Transistor 2SK973S FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
9.9. Size:287K inchange semiconductor
2sk972.pdf
isc N-Channel MOSFET Transistor 2SK972 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.10. Size:354K inchange semiconductor
2sk973l.pdf
isc N-Channel MOSFET Transistor 2SK973L FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
9.11. Size:205K inchange semiconductor
2sk974l.pdf
isc N-Channel MOSFET Transistor 2SK974L FEATURES With TO-251(IPAK) packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dra
9.12. Size:200K inchange semiconductor
2sk974s.pdf
isc N-Channel MOSFET Transistor 2SK974S FEATURES With TO-252 packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou
Otros transistores... 2SK959, 2SK960, 2SK960-MR, 2SK961, 2SK962, 2SK962-01, 2SK963, 2SK970, MMIS60R580P, 2SK972, 2SK973L, 2SK973S, 2SK974L, 2SK974S, 2SK975, 2SK979, 2SK981
