NTR1P02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR1P02
Código: P2*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
Carga de la puerta (Qg): 2.5 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET NTR1P02
NTR1P02 Datasheet (PDF)
ntr1p02 nvr1p02.pdf
NTR1P02, NVR1P02Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifewww.onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board Space
ntr1p02l nvtr01p02l.pdf
NTR1P02L, NVTR01P02LPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 PackageThese miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalV(BR)DSS RDS(on) Max ID Maxapplications are DC-DC converters and power management inportable and battery-
ntr1p02t1-d.pdf
NTR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyhttp://onsemi.comand Extends Battery LifeRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products-20 V 148 mW @ -10 V -1.0 A Miniature SOT-23 Surface Mount P
ntr1p02lt1 ntr1p02lt1h.pdf
NTR1P02LT1,NTR1P02LT1HPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 Packagehttp://onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Maxfor use in space sensitive power management circuitry. Typical-20 V 220 mW -1.3 Aapplications are DC-DC converters and power management i
ntr1p02t1 ntr1p02t3.pdf
NTR1P02T1, NVR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifehttp://onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board
ntr1p02l nvtr01p02l.pdf
Product specificationNTR1P02L, NVTR01P02LPower MOSFETV(BR)DSS RDS(on) Max ID Max-20 V, -1.3 A, P-Channel -20 V 220 mW @ -4.5 V -1.3 ASOT-23 PackageP-ChannelThese miniature surface mount MOSFETs low RDS(on) assure Dminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalapplications are DC-DC converters
ntr1p02lt1.pdf
SMD Type MOSFETP-Channel MOSFETNTR1P02LT1 (KTR1P02LT1)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-20V ID =-1.3 A1 2 RDS(ON) 220m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 350m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
Otros transistores... NTP5404N , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , CS150N03A8 , NTR1P02LT1 , NTR2101P , NTR4003N , IPS65R650CE , NTR4170N , NTR4171P , NTR4501N , NTR4502P .
