NTR1P02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR1P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de NTR1P02 MOSFET
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NTR1P02 datasheet
ntr1p02 nvr1p02.pdf
NTR1P02, NVR1P02 Power MOSFET -20 V, -1 A, P-Channel SOT-23 Package Features Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life www.onsemi.com RDS(on) = 0.180 W, VGS = -10 V RDS(on) = 0.280 W, VGS = -4.5 V V(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board Space
ntr1p02l nvtr01p02l.pdf
NTR1P02L, NVTR01P02L Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package These miniature surface mount MOSFETs low RDS(on) assure http //onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical V(BR)DSS RDS(on) Max ID Max applications are DC-DC converters and power management in portable and battery-
ntr1p02t1-d.pdf
NTR1P02T1 Power MOSFET -20 V, -1 A, P-Channel SOT-23 Package Features Ultra Low On-Resistance Provides Higher Efficiency http //onsemi.com and Extends Battery Life RDS(on) = 0.180 W, VGS = -10 V RDS(on) = 0.280 W, VGS = -4.5 V V(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products -20 V 148 mW @ -10 V -1.0 A Miniature SOT-23 Surface Mount P
ntr1p02lt1 ntr1p02lt1h.pdf
NTR1P02LT1, NTR1P02LT1H Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package http //onsemi.com These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Max for use in space sensitive power management circuitry. Typical -20 V 220 mW -1.3 A applications are DC-DC converters and power management i
Otros transistores... NTP5404N , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , IRLB4132 , NTR1P02LT1 , NTR2101P , NTR4003N , IPS65R650CE , NTR4170N , NTR4171P , NTR4501N , NTR4502P .
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