NTR1P02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR1P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de NTR1P02 MOSFET
NTR1P02 Datasheet (PDF)
ntr1p02 nvr1p02.pdf

NTR1P02, NVR1P02Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifewww.onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board Space
ntr1p02l nvtr01p02l.pdf

NTR1P02L, NVTR01P02LPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 PackageThese miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalV(BR)DSS RDS(on) Max ID Maxapplications are DC-DC converters and power management inportable and battery-
ntr1p02t1-d.pdf

NTR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyhttp://onsemi.comand Extends Battery LifeRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products-20 V 148 mW @ -10 V -1.0 A Miniature SOT-23 Surface Mount P
ntr1p02lt1 ntr1p02lt1h.pdf

NTR1P02LT1,NTR1P02LT1HPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 Packagehttp://onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Maxfor use in space sensitive power management circuitry. Typical-20 V 220 mW -1.3 Aapplications are DC-DC converters and power management i
Otros transistores... NTP5404N , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , 5N60 , NTR1P02LT1 , NTR2101P , NTR4003N , IPS65R650CE , NTR4170N , NTR4171P , NTR4501N , NTR4502P .
History: SML6060CN | 11N10C | FDS8882 | FCI25N60NF102
History: SML6060CN | 11N10C | FDS8882 | FCI25N60NF102



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