NTR4501N Todos los transistores

 ..1. Size:192K  onsemi
 ntr4501n nvr4501n.pdf

NTR4501N, NVR4501N MOSFET Power, Single, N-Channel, SOT-23 20 V, 3.2 A Features www.onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max (Note 1) SOT-23 Surface Mount for Small Footprint 70 mW @ 4.5 V 3.6 A NVR Prefix for Automotive and Other Applications Requiring 20 V Uniqu

 ..2. Size:105K  onsemi
 ntr4501n.pdf

NTR4501N Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching http //onsemi.com 2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (Note 1) Pb-Free Packages are Available 70 mW @ 4.5 V 3.6 A 20 V Applications 88 mW @ 2.5 V 3.1 A Load/P

 ..3. Size:73K  tysemi
 ntr4501n.pdf

Product specification NTR4501N Power MOSFET V(BR)DSS RDS(on) TYP ID MAX (Note 1) 20 V, 3.2 A, Single N-Channel, SOT-23 70 mW @ 4.5 V 3.6 A 20 V 85 mW @ 2.5 V 3.1 A Features Leading Planar Technology for Low Gate Charge / Fast Switching N-Channel 2.5 V Rated for Low Voltage Gate Drive D SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available Applicat

 0.1. Size:106K  onsemi
 ntr4501nt1.pdf

NTR4501N, NSTR4501N Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching http //onsemi.com 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint V(BR)DSS RDS(on) Typ ID Max (Note 1) NSTR Prefix for Automotive and Other Applications Requiring 70 mW @ 4.5 V 3.6 A Unique Site

 8.1. Size:130K  onsemi
 ntr4502p.pdf

NTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A Pb-Free Packages are Available 240 mW @ -4.5 V Applicatio

 8.2. Size:102K  onsemi
 ntr4503nt1.pdf

NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) http //onsemi.com AEC Q101 Qualified - NVTR4503N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX Applic

 8.3. Size:103K  onsemi
 ntr4503n.pdf

NTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive http //onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) These are Pb-Free Devices V(BR)DSS RDS(on) TYP ID MAX 85 mW @ 10 V Applications 30 V 2.5 A DC-DC Conversion 105 mW @ 4.5 V

 8.4. Size:136K  onsemi
 ntr4502p nvtr4502p.pdf

NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A AEC Q101 Qualified - NVTR4502P 240 mW @ -4.5 V

 8.5. Size:133K  onsemi
 ntr4502pt1 nvtr4502p.pdf

NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A AEC Q101 Qualified - NVTR4502P 240 mW @ -4.5 V

 8.6. Size:92K  onsemi
 ntr4503n nvtr4503n.pdf

NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive www.onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) TYP ID MAX Site and Control Change Requi

 8.7. Size:69K  tysemi
 ntr4503n.pdf

Product specification NTR4503N Power MOSFET V(BR)DSS RDS(on) TYP ID MAX 30 V, 2.5 A, Single N-Channel, SOT-23 85 mW @ 10 V 30 V 2.5 A Features 105 mW @ 4.5 V Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) N-Channel Pb-Free Package is Available D Applications

 8.8. Size:120K  tysemi
 ntr4502p nvtr4502p.pdf

Product specification NTR4502P, NVTR4502P Power MOSFET V(BR)DSS RDS(on) TYP ID Max (Note 1) 155 mW @ -10 V -30 V, -1.95 A, Single, P-Channel, -30 V -1.95 A SOT-23 240 mW @ -4.5 V P-Channel MOSFET Features S Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) G AEC Q

 8.9. Size:848K  cn vbsemi
 ntr4503nt1g.pdf

NTR4503NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 8.10. Size:867K  cn vbsemi
 ntr4502pt1g.pdf

NTR4502PT1G www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT