NTR4501N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR4501N
Código: TR1*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 2.4 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET NTR4501N
NTR4501N Datasheet (PDF)
ntr4501n nvr4501n.pdf
NTR4501N, NVR4501NMOSFET Power, Single,N-Channel, SOT-2320 V, 3.2 AFeatureswww.onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max(Note 1) SOT-23 Surface Mount for Small Footprint70 mW @ 4.5 V 3.6 A NVR Prefix for Automotive and Other Applications Requiring20 VUniqu
ntr4501n.pdf
NTR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint(Note 1) Pb-Free Packages are Available70 mW @ 4.5 V 3.6 A20 VApplications88 mW @ 2.5 V 3.1 A Load/P
ntr4501n.pdf
Product specificationNTR4501NPower MOSFETV(BR)DSS RDS(on) TYP ID MAX(Note 1)20 V, 3.2 A, Single N-Channel, SOT-2370 mW @ 4.5 V 3.6 A20 V85 mW @ 2.5 V 3.1 AFeatures Leading Planar Technology for Low Gate Charge / Fast SwitchingN-Channel 2.5 V Rated for Low Voltage Gate DriveD SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableApplicat
ntr4501nt1.pdf
NTR4501N, NSTR4501NPower MOSFET20 V, 3.2 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switchinghttp://onsemi.com 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint V(BR)DSS RDS(on) Typ ID Max(Note 1) NSTR Prefix for Automotive and Other Applications Requiring70 mW @ 4.5 V 3.6 AUnique Site
ntr4502p.pdf
NTR4502PPower MOSFET-30 V, -1.95 A, Single, P-Channel,SOT-23Featureshttp://onsemi.com Leading Planar Technology for Low Gate Charge / Fast SwitchingV(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm)-30 V -1.95 A Pb-Free Packages are Available240 mW @ -4.5 VApplicatio
ntr4503nt1.pdf
NTR4503N, NVTR4503NPower MOSFET30 V, 2.5 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm)http://onsemi.com AEC Q101 Qualified - NVTR4503N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXApplic
ntr4503n.pdf
NTR4503NPower MOSFET30 V, 2.5 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drivehttp://onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) These are Pb-Free DevicesV(BR)DSS RDS(on) TYP ID MAX85 mW @ 10 VApplications30 V 2.5 A DC-DC Conversion105 mW @ 4.5 V
ntr4502p nvtr4502p.pdf
NTR4502P, NVTR4502PPower MOSFET-30 V, -1.95 A, Single, P-Channel,SOT-23Featureshttp://onsemi.com Leading Planar Technology for Low Gate Charge / Fast SwitchingV(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm)-30 V -1.95 A AEC Q101 Qualified - NVTR4502P240 mW @ -4.5 V
ntr4502pt1 nvtr4502p.pdf
NTR4502P, NVTR4502PPower MOSFET-30 V, -1.95 A, Single, P-Channel,SOT-23Featureshttp://onsemi.com Leading Planar Technology for Low Gate Charge / Fast SwitchingV(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm)-30 V -1.95 A AEC Q101 Qualified - NVTR4502P240 mW @ -4.5 V
ntr4503n nvtr4503n.pdf
NTR4503N, NVTR4503NPower MOSFET30 V, 2.5 A, Single N-Channel, SOT-23Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drivewww.onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) TYP ID MAXSite and Control Change Requi
ntr4503n.pdf
Product specificationNTR4503NPower MOSFETV(BR)DSS RDS(on) TYP ID MAX30 V, 2.5 A, Single N-Channel, SOT-2385 mW @ 10 V30 V 2.5 AFeatures105 mW @ 4.5 V Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) N-Channel Pb-Free Package is AvailableDApplications
ntr4502p nvtr4502p.pdf
Product specificationNTR4502P, NVTR4502PPower MOSFETV(BR)DSS RDS(on) TYP ID Max (Note 1)155 mW @ -10 V-30 V, -1.95 A, Single, P-Channel,-30 V -1.95 ASOT-23 240 mW @ -4.5 VP-Channel MOSFETFeaturesS Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) G AEC Q
ntr4503nt1g.pdf
NTR4503NT1Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
ntr4502pt1g.pdf
NTR4502PT1Gwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
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