NTR4502P Todos los transistores

 

NTR4502P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTR4502P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: SOT23

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NTR4502P datasheet

 ..1. Size:130K  onsemi
ntr4502p.pdf pdf_icon

NTR4502P

NTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A Pb-Free Packages are Available 240 mW @ -4.5 V Applicatio

 ..2. Size:136K  onsemi
ntr4502p nvtr4502p.pdf pdf_icon

NTR4502P

NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A AEC Q101 Qualified - NVTR4502P 240 mW @ -4.5 V

 ..3. Size:120K  tysemi
ntr4502p nvtr4502p.pdf pdf_icon

NTR4502P

Product specification NTR4502P, NVTR4502P Power MOSFET V(BR)DSS RDS(on) TYP ID Max (Note 1) 155 mW @ -10 V -30 V, -1.95 A, Single, P-Channel, -30 V -1.95 A SOT-23 240 mW @ -4.5 V P-Channel MOSFET Features S Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) G AEC Q

 0.1. Size:133K  onsemi
ntr4502pt1 nvtr4502p.pdf pdf_icon

NTR4502P

NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A AEC Q101 Qualified - NVTR4502P 240 mW @ -4.5 V

Otros transistores... NTR1P02 , NTR1P02LT1 , NTR2101P , NTR4003N , IPS65R650CE , NTR4170N , NTR4171P , NTR4501N , 13N50 , NTR4503N , NTS2101P , NTS4001N , NTS4101P , NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N .

History: SSA50R060S | S80N10RP

 

 

 

 

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