NTTFS4823N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS4823N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 175 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: WDFN8
Búsqueda de reemplazo de NTTFS4823N MOSFET
NTTFS4823N Datasheet (PDF)
nttfs4823n.pdf

NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @
nttfs4823ntag.pdf

NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @
nttfs4824n.pdf

NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4
nttfs4824ntag.pdf

NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4
Otros transistores... NTR4503N , NTS2101P , NTS4001N , NTS4101P , NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N , AON6380 , NTTFS4824N , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N .
History: 2SK3534-01MR | ME2345A-G | BRA7N80
History: 2SK3534-01MR | ME2345A-G | BRA7N80



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP50N20MP | AP50N10P | AP50N10D | AP50N06NF | AP50N06D | AP50N05D | AP50N04D | AP50N03DF | AP50N03D | AP50N03AD | AP50H06NF | AP50G03GD | AP4P05MI | AP4N15MI | AP4N10MI | AP2320MI
Popular searches
a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet