NTTFS4824N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS4824N
Código: 4824
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 29 nC
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: WDFN8
Búsqueda de reemplazo de MOSFET NTTFS4824N
NTTFS4824N Datasheet (PDF)
nttfs4824n.pdf
NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4
nttfs4824ntag.pdf
NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4
nttfs4823ntag.pdf
NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @
nttfs4821ntag.pdf
NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @
nttfs4821n.pdf
NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @
nttfs4823n.pdf
NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @
Otros transistores... NTS2101P , NTS4001N , NTS4101P , NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N , NTTFS4823N , IRFZ24N , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N , NTTFS5116PL .
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