NTTFS4824N Todos los transistores

 

NTTFS4824N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS4824N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: WDFN8

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NTTFS4824N datasheet

 ..1. Size:105K  onsemi
nttfs4824n.pdf pdf_icon

NTTFS4824N

NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4

 0.1. Size:106K  onsemi
nttfs4824ntag.pdf pdf_icon

NTTFS4824N

NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4

 6.1. Size:106K  onsemi
nttfs4823ntag.pdf pdf_icon

NTTFS4824N

NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @

 6.2. Size:106K  onsemi
nttfs4821ntag.pdf pdf_icon

NTTFS4824N

NTTFS4821N Power MOSFET 30 V, 57 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.0 mW @ 10 V 30 V 57 A Applications 10.8 mW @

Otros transistores... NTS2101P , NTS4001N , NTS4101P , NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N , NTTFS4823N , AON7506 , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N , NTTFS5116PL .

 

 

 


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