NTTFS4930N Todos los transistores

 

NTTFS4930N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS4930N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.06 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26.6 nS

Cossⓘ - Capacitancia de salida: 197 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: WDFN8

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NTTFS4930N datasheet

 ..1. Size:127K  onsemi
nttfs4930n.pdf pdf_icon

NTTFS4930N

NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC

 0.1. Size:116K  onsemi
nttfs4930ntag.pdf pdf_icon

NTTFS4930N

NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC

 6.1. Size:195K  onsemi
nttfs4932n.pdf pdf_icon

NTTFS4930N

NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A

 6.2. Size:113K  onsemi
nttfs4932ntag.pdf pdf_icon

NTTFS4930N

NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S

Otros transistores... NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N , NTTFS4823N , NTTFS4824N , NTTFS4928N , NTTFS4929N , TK10A60D , NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL , NTTFS5826NL .

 

 

 


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