NTTFS4941N Todos los transistores

 

NTTFS4941N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS4941N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 573 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm

Encapsulados: WDFN8

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NTTFS4941N datasheet

 ..1. Size:111K  onsemi
nttfs4941n.pdf pdf_icon

NTTFS4941N

NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S

 0.1. Size:112K  onsemi
nttfs4941ntag.pdf pdf_icon

NTTFS4941N

NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S

 6.1. Size:111K  onsemi
nttfs4943n-d.pdf pdf_icon

NTTFS4941N

NTTFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 7.2 mW @ 10 V 30 V 41 A DC-DC

 6.2. Size:109K  onsemi
nttfs4945n.pdf pdf_icon

NTTFS4941N

NTTFS4945N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 34 A Power

Otros transistores... NTTFS4823N , NTTFS4824N , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , IRFP250 , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL , NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ , NTZD3152P .

History: SL9N150T | SWP70N10V | SPB80N06S2-09 | TPCP8001-H | SE472

 

 

 


History: SL9N150T | SWP70N10V | SPB80N06S2-09 | TPCP8001-H | SE472

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