NTTFS4941N Todos los transistores

 

NTTFS4941N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTTFS4941N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.19 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 573 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: WDFN8
 

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NTTFS4941N Datasheet (PDF)

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 nttfs4941n.pdf pdf_icon

NTTFS4941N

NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S

 0.1. Size:112K  onsemi
 nttfs4941ntag.pdf pdf_icon

NTTFS4941N

NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S

 6.1. Size:111K  onsemi
 nttfs4943n-d.pdf pdf_icon

NTTFS4941N

NTTFS4943NPower MOSFET30 V, 41 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications7.2 mW @ 10 V30 V 41 A DC-DC

 6.2. Size:109K  onsemi
 nttfs4945n.pdf pdf_icon

NTTFS4941N

NTTFS4945NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 34 A Power

MOSTRAR MÁS

Otros transistores... NTTFS4823N , NTTFS4824N , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , IRFP250 , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL , NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ , NTZD3152P .

History: STD3N62K3 | AP05N20GI-HF | SML1004RCN | SD8901HD | AOB15S65L | IRLML6401TRPBF | S45N17S

 

 
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