NTZD3152P Todos los transistores

NTZD3155C MOSFET Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA www.onsemi.com Features ID Max Leading Trench Technology for Low RDS(on) Performance V(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance 0.4 W @ 4.5 V Low Threshold Voltage N-Channel 0.5 W @ 2.5 V 540 mA 20 V ESD Protected Gate 0.7 W @ 1.8 V Sma

NTZD3158P Small Signal MOSFET -20 V, -430 mA, Dual P-Channel with ESD Protection, SOT-563 Features http //onsemi.com Low RDS(on) Improving System Efficiency Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 0.5 W @ -4.5 V Small Footprint 1.6 x 1.6 mm -20 V 0.6 W @ -2.5 V -430 mA These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.

NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http //onsemi.com Leading Trench Technology for Low RDS(on) Performance ID Max High Efficiency System Performance V(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage 0.4 W @ 4.5 V ESD Protected Gate N-Channel 0.5 W @ 2.5 V 540 mA 20 V Small Footpri

NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N-Channel Features Low RDS(on) Improving System Efficiency Low Threshold Voltage http //onsemi.com Small Footprint 1.6 x 1.6 mm ESD Protected Gate V(BR)DSS RDS(on) TYP ID Max (Note 1) These are Pb-Free Devices 400 mW @ 4.5 V Applications 20 500 mW @ 2.5 V 540 mA Load/Power Switches 700 mW @ 1.8 V Power

NTZD3156C Small Signal MOSFET 20 V, 540 mA / -20 V, -430 mA Complementary N- and P-Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection http //onsemi.com Features ID Max Leading Trench Technology for Low RDS(on) Performance V(BR)DSS RDS(on) Max (Note 1) High Efficiency System Performance 0.55 W @ 4.5 V Low Threshold Voltage N-Channel 0.7 W @ 2.5 V

NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http //onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance ID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate 0.4 W @ 4.5 V N-Channel 0.5 W @ 2.5 V 540 mA Small Footprint 1.

NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N-Channel Features Low RDS(on) Improving System Efficiency http //onsemi.com Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max (Note 1) Small Footprint 1.6 x 1.6 mm ESD Protected Gate 400 mW @ 4.5 V 20 500 mW @ 2.5 V 540 mA These are Pb-Free Devices 700 mW @ 1.8 V Applications Load/Power Switches D1 D2 P

NTZD3155CT2G www.VBsemi.tw N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 0.6 TrenchFET Power MOSFET N-Channel 20 0.025 at VGS = 4.5 V 0.55 100 % Rg Tested 0.040 at VGS = - 10 V - 0.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.045 at