NVD5803N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD5803N
Código: V5803N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 85 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 51 nC
Tiempo de subida (tr): 21.4 nS
Conductancia de drenaje-sustrato (Cd): 390 pF
Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NVD5803N
NVD5803N Datasheet (PDF)
nvd5803n.pdf
NVD5803NPower MOSFET40 V, 85 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant40 V 5.7 mW @ 10 V 85 AApplications DC Motor DriveD Reverse Battery Protection G
nvd5807n.pdf
NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight
nvd5805n.pdf
NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices
nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin
ntd5802n nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring
nvd5806n.pdf
NTD5806N, NVD5806NPower MOSFET40 V, 33 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant26 mW @ 4.5 V40 V33 AApplications19 mW @ 10 V CCFL BacklightD
Otros transistores... NTZD3154N , NTZD3155C , NTZD5110N , NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , 8205A , NVD5862N , NVD5863NL , NVD5865NL , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , NVTFS4823N .
